Dual N-Channel Enhancement Mode Power MOSFET
CYStech Electronics Corp.
Spec. No. : C395Q8 Issued Date : 2006.10.25 Revised Date : Page No. : 1/3
Dual N-CHANNEL ENH...
Description
CYStech Electronics Corp.
Spec. No. : C395Q8 Issued Date : 2006.10.25 Revised Date : Page No. : 1/3
Dual N-CHANNEL ENHANCEMENT MODE POWER MOSFET
MTDN4228Q8
Description
The MTDN4228Q8 provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
Features
RDS(ON)=40mΩ@VGS=4.5V, ID=4A Simple drive requirement Low on-resistance Fast switching speed Dual N-ch MOSFET package Pb-free package
Equivalent Circuit
MTDN4228Q8
Outline
SOP-8
G:Gate S:Source D:Drain
MTDN4228Q8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C395Q8 Issued Date : 2006.10.25 Revised Date : Page No. : 2/3
Absolute Maximum Ratings (Ta=25°C)
Parameter Drain-Source Breakdown Voltage Gate-Source Voltage Continuous Drain Current @TA=25 °C (Note 1) Continuous Drain Current @TA=70 °C (Note 1) Pulsed Drain Current (Note 2)
Total Power Dissipation @ TA=25 °C Linear Derating Factor
Operating Junction Temperature Storage Temperature Thermal Resistance, Junction-to-Ambient
Symbol BVDSS
VGS ID ID IDM Pd
Tj Tstg Rth,ja
Note : 1.Surface mounted on 1 in² copper pad of FR-4 board, t≤10s. 2.Pulse width limited by maximum junction temperature.
Limits
30 ±20 6.8 5.5 40
2 0.016 -55~+150 -55~+150 62.5
Unit
V V A A A W W / °C °C °C °C/W
Electrical Char...
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