Document
CYStech Electronics Corp.
N-CHANNEL MOSFET (dual transistors)
MTDN3018S6R
Spec. No. : C320S6R Issued Date : 2007.12.23 Revised Date :2008.01.25 Page No. : 1/ 7
Features
• Low on-resistance • High ESD capability • High speed switching • Low-voltage drive(4V) • Easily designed drive circuits • Easy to use in parallel • Pb-free package
Equivalent Circuit
MTDN3018S6R
Outline
SOT-363R
Tr1 Tr2
The following characteristics apply to both Tr1 and Tr2
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage Gate-Source Voltage
Drain Current
Drain Reverse Current
Power Dissipation
ESD susceptibility
Junction Temperature Storage Temperature
Continuous Pulsed Continuous Pulsed
Symbol
VDSS
VGSS ID IDP IDR IDRP Pd
Tj Tstg
Note : 1. Pulse test, pulse width≤300μs, duty≤2%
2. 200mW per element must not be exceeded.
3. Human body model, 1.5kΩ in series with 100pF
Limits
60 ±20 115 700 115 700
300(total)
1250
150
-55~+150
(Note 1)
(Note 1) (Note 2) (Note 3)
Unit
V V mA mA mA mA
mW
V
°C °C
MTDN3018S6R
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C320S6R Issued Date : 2007.12.23 Revised Date :2008.01.25 Page No. : 2/ 7
Electrical Characteristics (Ta=25°C)
Symbol Min. Typ. Max.
BVDSS* VGS(th) IGSS IDSS
RDS(ON)*
60 1 -
-- 2.5 - ±10 -1 7.4 13 7.8 15 4.4 12 4.9 6 3.3 4.5
GFS 100 - -
Ciss - 7.32 Coss - 3.42 Crss - 7.63 -
Unit Test Conditions V VGS=0, ID=10μA V VDS=VGS, ID=250μA μA VGS=±20V, VDS=0 μA VDS=60V, VGS=0 ID=1mA, VGS=2.5V ID=10mA, VGS=2.5V Ω ID=10mA, VGS=4V ID=200mA, VGS=4V ID=200mA, VGS=10V mS VDS=10V, ID=100mA
pF VDS=10V, VGS=0, f=1MHz
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
Ordering Information
Device MTDN3018S6R
Package
SOT-363 (Pb-free)
Shipping 3000 pcs / Tape & Reel
Marking 72
MTDN3018S6R
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves
Spec. No. : C320S6R Issued Date : 2007.12.23 Revised Date :2008.01.25 Page No. : 3/ 7
Drain Current - ID(A)
Typical Output Characteristics
0.3
0.25 6V
4V
3.5V
0.2
0.15 3V 0.1
0.05
0 0
VGS=2.2V
1 23 Drain-Source Voltage -VDS(V)
4
1000
Static Drain-Source On-State resistance vs Drain Current
Drain Current -ID(A)
Typical Transfer Characteristics 0.3
0.25 VDS=10V
0.2
0.15
0.1
0.05
0 0 1 23 4 Gate-Source Voltage-VGS(V) Static Drain-Source On-State resistance vs Drain Current
10
Static Drain-Source On-State Resistance-RDS(on)(Ω)
Static Drain-Source On-State ResistanceRDS(on)(Ω)
100 VGS=2.5V
10
VGS=4V
VGS=5V VGS=10V
Static Drain-Source On-State Resistance-RDS(ON)(Ω)
1 0.001
0.01 0.1 Drain Current-ID(A)
1
Static Drain-Source On-State Resistance vs Gate-Source Voltage
7
6
5
4 ID=100mA 3
2 ID=50mA
1
0 0 5 10 15 20 25 Gate-Source Voltage-VGS(V)
Source-Drain Voltage-VSD(V)
1 0.001
0.01 0.1 Drain Current-ID(A)
1
Reverse Drain Current vs Source-Drain Voltage 10
1
0.1
0.01
0.001 0
0.2 0.4 0.6 0.8 Reverse Drain Current -IDR(A)
1
MTDN3018S6R
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C320S6R Issued Date : 2007.12.23 Revised Date :2008.01.25 Page No. : 4/ 7
Capacitance---(pF) Power Dissipation---PD(mW)
Characteristic Curves (Cont.)
Capacitance vs Drain-to-Source Voltage 100
10
1 0.1
Crss Ciss
C oss
1 10 Drain-Source Voltage -VDS(V)
100
350 300 250 200 150 100 50
0 0
Power Derating Curves dual single
50 100 150 Ambient Temperature --- Ta(℃ )
200
MTDN3018S6R
CYStek Product Specification
Reel Dimension
CYStech Electronics Corp.
Spec. No. : C320S6R Issued Date : 2007.12.23 Revised Date :2008.01.25 Page No. : 5/ 7
Carrier Tape Dimension
MTDN3018S6R
CYStek Product Specification
CYStech Electronics Corp.
SOT-363R Dimension
Spec. No. : C320S6R Issued Date : 2007.12.23 Revised Date :2008.01.25 Page No. : 6/ 7
Style: Pin 1. Source1 (S1) Pin 2. Gate1 (G1) Pin 3. Drain2 (D2) Pin 4. Source2 (S2) Pin 5. Gate2 (G2) Pin 6. Drain1 (D1)
Marking:
72
6-Lead SOT-363R Plastic Surface Mounted Package CYStek Package Code: S6R
DIM
Inches Min. Max.
A 0.071 0.087
B 0.045 0.053
C 0.031 0.043
D 0.004 0.012
G 0.026BSC
H - 0.004
Millimeters Min. Max.
DIM
Inches Min. Max.
1.8 2.2 J 0.004 0.010
1.15 1.35
K 0.004 0.012
0.8 1.1 N
0.008 REF
0.1 0.3 S 0.079 0.087
0.65BSC
Y 0.012 0.016
- 0.1
*:Typical Millimeters Min. Max. 0.1 0.25 0.1 0.30 0.20 REF 2.00 2.40 0.30 0.40
Notes : 1.Controlling dimension : millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material :
• Lead : 42 Alloy ; solder plating • Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0
Recommended wave soldering condition
Product
Peak Temperature
Pb-free devices
260 +0/-5 °C
MTDN3018S6R
Soldering Time 5 +1/-1 seconds
CYStek Product Specification
CYStech Electronics Corp.
Recommended temperature profile for IR reflow
Spec. No. : C3.