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MTDN3018S6R Dataheets PDF



Part Number MTDN3018S6R
Manufacturers CYStech
Logo CYStech
Description N-CHANNEL MOSFET
Datasheet MTDN3018S6R DatasheetMTDN3018S6R Datasheet (PDF)

CYStech Electronics Corp. N-CHANNEL MOSFET (dual transistors) MTDN3018S6R Spec. No. : C320S6R Issued Date : 2007.12.23 Revised Date :2008.01.25 Page No. : 1/ 7 Features • Low on-resistance • High ESD capability • High speed switching • Low-voltage drive(4V) • Easily designed drive circuits • Easy to use in parallel • Pb-free package Equivalent Circuit MTDN3018S6R Outline SOT-363R Tr1 Tr2 The following characteristics apply to both Tr1 and Tr2 Absolute Maximum Ratings (Ta=25°C) Parameter D.

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CYStech Electronics Corp. N-CHANNEL MOSFET (dual transistors) MTDN3018S6R Spec. No. : C320S6R Issued Date : 2007.12.23 Revised Date :2008.01.25 Page No. : 1/ 7 Features • Low on-resistance • High ESD capability • High speed switching • Low-voltage drive(4V) • Easily designed drive circuits • Easy to use in parallel • Pb-free package Equivalent Circuit MTDN3018S6R Outline SOT-363R Tr1 Tr2 The following characteristics apply to both Tr1 and Tr2 Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Drain Reverse Current Power Dissipation ESD susceptibility Junction Temperature Storage Temperature Continuous Pulsed Continuous Pulsed Symbol VDSS VGSS ID IDP IDR IDRP Pd Tj Tstg Note : 1. Pulse test, pulse width≤300μs, duty≤2% 2. 200mW per element must not be exceeded. 3. Human body model, 1.5kΩ in series with 100pF Limits 60 ±20 115 700 115 700 300(total) 1250 150 -55~+150 (Note 1) (Note 1) (Note 2) (Note 3) Unit V V mA mA mA mA mW V °C °C MTDN3018S6R CYStek Product Specification CYStech Electronics Corp. Spec. No. : C320S6R Issued Date : 2007.12.23 Revised Date :2008.01.25 Page No. : 2/ 7 Electrical Characteristics (Ta=25°C) Symbol Min. Typ. Max. BVDSS* VGS(th) IGSS IDSS RDS(ON)* 60 1 - -- 2.5 - ±10 -1 7.4 13 7.8 15 4.4 12 4.9 6 3.3 4.5 GFS 100 - - Ciss - 7.32 Coss - 3.42 Crss - 7.63 - Unit Test Conditions V VGS=0, ID=10μA V VDS=VGS, ID=250μA μA VGS=±20V, VDS=0 μA VDS=60V, VGS=0 ID=1mA, VGS=2.5V ID=10mA, VGS=2.5V Ω ID=10mA, VGS=4V ID=200mA, VGS=4V ID=200mA, VGS=10V mS VDS=10V, ID=100mA pF VDS=10V, VGS=0, f=1MHz *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% Ordering Information Device MTDN3018S6R Package SOT-363 (Pb-free) Shipping 3000 pcs / Tape & Reel Marking 72 MTDN3018S6R CYStek Product Specification CYStech Electronics Corp. Characteristic Curves Spec. No. : C320S6R Issued Date : 2007.12.23 Revised Date :2008.01.25 Page No. : 3/ 7 Drain Current - ID(A) Typical Output Characteristics 0.3 0.25 6V 4V 3.5V 0.2 0.15 3V 0.1 0.05 0 0 VGS=2.2V 1 23 Drain-Source Voltage -VDS(V) 4 1000 Static Drain-Source On-State resistance vs Drain Current Drain Current -ID(A) Typical Transfer Characteristics 0.3 0.25 VDS=10V 0.2 0.15 0.1 0.05 0 0 1 23 4 Gate-Source Voltage-VGS(V) Static Drain-Source On-State resistance vs Drain Current 10 Static Drain-Source On-State Resistance-RDS(on)(Ω) Static Drain-Source On-State ResistanceRDS(on)(Ω) 100 VGS=2.5V 10 VGS=4V VGS=5V VGS=10V Static Drain-Source On-State Resistance-RDS(ON)(Ω) 1 0.001 0.01 0.1 Drain Current-ID(A) 1 Static Drain-Source On-State Resistance vs Gate-Source Voltage 7 6 5 4 ID=100mA 3 2 ID=50mA 1 0 0 5 10 15 20 25 Gate-Source Voltage-VGS(V) Source-Drain Voltage-VSD(V) 1 0.001 0.01 0.1 Drain Current-ID(A) 1 Reverse Drain Current vs Source-Drain Voltage 10 1 0.1 0.01 0.001 0 0.2 0.4 0.6 0.8 Reverse Drain Current -IDR(A) 1 MTDN3018S6R CYStek Product Specification CYStech Electronics Corp. Spec. No. : C320S6R Issued Date : 2007.12.23 Revised Date :2008.01.25 Page No. : 4/ 7 Capacitance---(pF) Power Dissipation---PD(mW) Characteristic Curves (Cont.) Capacitance vs Drain-to-Source Voltage 100 10 1 0.1 Crss Ciss C oss 1 10 Drain-Source Voltage -VDS(V) 100 350 300 250 200 150 100 50 0 0 Power Derating Curves dual single 50 100 150 Ambient Temperature --- Ta(℃ ) 200 MTDN3018S6R CYStek Product Specification Reel Dimension CYStech Electronics Corp. Spec. No. : C320S6R Issued Date : 2007.12.23 Revised Date :2008.01.25 Page No. : 5/ 7 Carrier Tape Dimension MTDN3018S6R CYStek Product Specification CYStech Electronics Corp. SOT-363R Dimension Spec. No. : C320S6R Issued Date : 2007.12.23 Revised Date :2008.01.25 Page No. : 6/ 7 Style: Pin 1. Source1 (S1) Pin 2. Gate1 (G1) Pin 3. Drain2 (D2) Pin 4. Source2 (S2) Pin 5. Gate2 (G2) Pin 6. Drain1 (D1) Marking: 72 6-Lead SOT-363R Plastic Surface Mounted Package CYStek Package Code: S6R DIM Inches Min. Max. A 0.071 0.087 B 0.045 0.053 C 0.031 0.043 D 0.004 0.012 G 0.026BSC H - 0.004 Millimeters Min. Max. DIM Inches Min. Max. 1.8 2.2 J 0.004 0.010 1.15 1.35 K 0.004 0.012 0.8 1.1 N 0.008 REF 0.1 0.3 S 0.079 0.087 0.65BSC Y 0.012 0.016 - 0.1 *:Typical Millimeters Min. Max. 0.1 0.25 0.1 0.30 0.20 REF 2.00 2.40 0.30 0.40 Notes : 1.Controlling dimension : millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material : • Lead : 42 Alloy ; solder plating • Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0 Recommended wave soldering condition Product Peak Temperature Pb-free devices 260 +0/-5 °C MTDN3018S6R Soldering Time 5 +1/-1 seconds CYStek Product Specification CYStech Electronics Corp. Recommended temperature profile for IR reflow Spec. No. : C3.


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