MTBA6C15J4

CYStech Electronics Corp. Spec. No. : C938J4 Issued Date : 2014.10.15 Revised Date : 2017.07.25 Page No. : 1/13 N & P-Channel Enhancement Mode Power MOSFET MTBA6C15J4 BVDSS ID @VGS=10V(-10V), TA=25°C Features Low gate charge Simple drive requirement Pb-free lead plating and halogen-free package ID @VGS=10V(-10V), TC=25°C RDSON(TYP)@VGS=10V(-10V) RDSON(TYP)@VGS=4.5V(-4.5V) N-CH 150V 2A 9.3A 167mΩ 172mΩ P-CH -150V -1.5A -7.1A 253mΩ 273mΩ Equivalent Circuit MTBA6C15J4 Outline TO-252-4L G：Gate D：Drain S：Source Absolute Maximum Ratings (TA=25°C, unless otherwise noted) Parameter Symbol Limits N-channel P-channel Drain-Source Voltage VDS 150 -150 Gate-Source Voltage VGS ±20 ±20 Continuous Drain Current @ TC=25°C, VGS=10V(-10V) (Note1) Continuous Drain Current @ TC=100°C, VGS=10V(-10V) (Note1) ID 9.3 6.6 -7.1 -5.0 Continuous Drain Current @ TA=25°C, VGS=10V(-10V) (Note2) Continuous Drain Current @ TA=70°C, VGS=10V(-10V) (Note2) IDSM 2 1.7 -1.5 -1.3 Pulsed Drain Current *1 (Note3) IDM 20 -20 Total Power Dissipation (TC=25℃) Total Power Dissipation (TC=100℃) (Note1) (Note1) PD 37.5 18.7 Total Power Dissipation (TA=25℃) Total Power Dissipation (TA=70℃) (Note2) (Note2) PDSM 2.4 1.7 Operating Junction and Storage Temperature Range Tj, Tstg -55~+175 Note : *1. Pulse width limited by maximum junction temperature *2. Duty cycle ≤ 1% Unit V A W °C MTBA6C15J4 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C938J4 Issued...