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MTBA6C12Q8

CYStech

N & P-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp. Spec. No. : C973Q8 Issued Date : 2014.09.23 Revised Date : Page No. : 1/12 N- AND P-Channel ...


CYStech

MTBA6C12Q8

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CYStech Electronics Corp. Spec. No. : C973Q8 Issued Date : 2014.09.23 Revised Date : Page No. : 1/12 N- AND P-Channel Logic Level Enhancement Mode MOSFET MTBA6C12Q8 N-CH P-CH BVDSS 120V -120V ID @ VGS=10V(-10V) 2A -1.7A RDSON(typ.) @VGS=(-)10V 178 mΩ 246 mΩ RDSON(typ.) @VGS=(-)4.5V 185 mΩ 276 mΩ Description The MTBA6C12Q8 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single SOP-8 package, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications. Features Simple drive requirement Low on-resistance Fast switching speed Pb-free lead plating and halogen-free package Equivalent Circuit MTBA6C12Q8 Outline SOP-8 G:Gate S:Source D:Drain Ordering Information Device MTBA6C12Q8-0-T3-G Package Shipping SOP-8 (Pb-free lead plating & halogen-free package) 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name MTBA6C12Q8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C973Q8 Issued Date : 2014.09.23 Revised Date : Page No. : 2/12 Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Drain-Source Breakdown Voltage Gate-Source Voltage C...




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