MTBA5C10V8

CYStech Electronics Corp. Spec. No. : C744V8 Issued Date : 2014.11.03 Revised Date : Page No. : 1/13 N- AND P-Channel Logic Level Enhancement Mode MOSFET MTBA5C10V8 BVDSS N-CH 100V ID@VGS=10V(-10V) 2.3A RDSON@VGS=10V(-10V) typ. 126.5mΩ RDSON@VGS=4.5V(-4.5V) typ. 130mΩ P-CH -100V -1.7A 216mΩ 227mΩ Features Simple drive requirement Low on-resistance Fast switching speed Pb-free lead plating and halogen-free package Equivalent Circuit MTBA5C10V8 Outline DFN3×3 G：Gate S：Source D：Drain Pin 1 Ordering Information Device MTBA5C10V8-0-T6-G Package DFN3×3 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T6 : 3000 pcs / tape & reel,13” reel Product rank, zero for no rank products Product name MTBA5C10V8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C744V8 Issued Date : 2014.11.03 Revised Date : Page No. : 2/13 Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Symbol Limits N-channel P-channel Drain-Source Breakdown Voltage BVDSS 100 -100 Gate-Source Voltage VGS ±20 ±20 Continuous Drain Current *2 TA=25 °C, VGS=10V (-10V) TA=70 °C, VGS=10V (-10V) IDSM 2.3 1.8 -1.7 -1.4 Continuous Drain Current TC=25 °C, VGS=10V (-10V) TC=100 °C, VGS=10V (-10V) ID 3.4 2.4 -2.6 -1.8 Pulsed Drain Current * 3 IDM 10 -10 Total Power Dissipation Single device oper...