MTBA5C10Q8

CYStech Electronics Corp. Spec. No. : C744Q8 Issued Date : 2009.10.16 Revised Date : 2011.10.03 Page No. : 1/10 N- AND P-Channel Logic Level Enhancement Mode MOSFET MTBA5C10Q8 N-CH P-CH BVDSS 100V -100V ID 3A -2.5A RDSON(MAX.) 150mΩ 250mΩ Description The MTBA5C10Q8 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single SOP-8 package, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications. Features Simple drive requirement Low on-resistance Fast switching speed Pb-free lead plating and halogen-free package Equivalent Circuit MTBA5C10Q8 Outline SOP-8 G：Gate S：Source D：Drain MTBA5C10Q8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C744Q8 Issued Date : 2009.10.16 Revised Date : 2011.10.03 Page No. : 2/10 Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Drain-Source Breakdown Voltage Gate-Source Voltage Continuous Drain Current @TC=25 °C Continuous Drain Current @TC=100 °C Pulsed Drain Current (Note 1) Power Dissipation @TA=25°C Power Dissipation @TA=100°C Symbol BVDSS VGS ID ID IDM PD Limits N-channel P-channel 100 -100 ±20 ±20 3 -2.5 2.1 -1.8 12 -10 2.4 1.3 Operating Junction and Storage Temperature Range Tj; Tstg -55~+175 Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient (Note 2...