MTBA5C10H8

CYStech Electronics Corp. Spec. No. : C744H8 Issued Date : 2015.03.27 Revised Date : 2015.03.30 Page No. : 1/13 N- AND P-Channel Enhancement Mode MOSFET MTBA5C10H8 BVDSS ID@VGS=10V(-10V), TA=25°C ID@VGS=10V(-10V), TC=25°C RDSON(typ)@VGS=10V(-10V) RDSON(typ)@VGS=4.5V(-4.5V) Features Simple drive requirement Low on-resistance Fast switching speed Pb-free lead plating and halogen-free package N-CH 100V 3.0A 8.6A 120mΩ 125mΩ P-CH -100V -2.7A -7.8A 170mΩ 180mΩ Equivalent Circuit MTBA5C10H8 Outline Pin 1 DFN5×6 G：Gate S：Source D：Drain Ordering Information Device MTBA5C10H8-0-T6-G Package Shipping DFN 5 ×6 (Pb-free lead plating & halogen-free package) 3000 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name MTBA5C10H8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C744H8 Issued Date : 2015.03.27 Revised Date : 2015.03.30 Page No. : 2/13 Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Drain-Source Breakdown Voltage Gate-Source Voltage TA=25 °C, VGS=10V (-10V) Continuous Drain Current TA=70 °C, VGS=10V (-10V) TC=25 °C, VGS=10V (-10V) TC=100 °C, VGS=10V (-10V) Pulsed Drain Current (Note 1 & 2) TA=25 °C Power Dissipation TA=70 °C TC=25 °C TC=100 °C Operating Junction and Storage Temperature Range Symbol BVDSS VGS ID IDSM IDM P...