MTBA5A10Q8

CYStech Electronics Corp. Spec. No. : C591Q8 Issued Date : 2010.10.08 Revised Date : 2011.10.03 Page No. : 1/8 Dual N-Channel Logic Level Enhancement Mode Power MOSFET MTBA5A10Q8 BVDSS 100V ID 3A RDSON(MAX) 150mΩ Description The MTBA5A10Q8 provides the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications. Features RDS(ON)=150mΩ(max.)@VGS=10V, ID=2.5A Simple drive requirement Low on-resistance Fast switching speed Dual N-ch MOSFET package Pb-free lead plating & Halogen-free package Equivalent Circuit MTBA5A10Q8 Outline SOP-8 G：Gate S：Source D：Drain MTBA5A10Q8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C591Q8 Issued Date : 2010.10.08 Revised Date : 2011.10.03 Page No. : 2/8 Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, TC=25 °C Continuous Drain Current, TC=100 °C Pulsed Drain Current (Note 1) Power Dissipation TA=25°C (Note 3) TA=100°C Operating Junction and Storage Temperature Range Symbol VDS VGS ID ID IDM PD Tj ; Tstg Limits 100 ±20 3 2.1 12 2.4 1.3 -55~+175 Unit V A W °C Thermal Data Parameter Symbol Value Unit Thermal Resistance, Junction-to-case, max Rth,j-c 25 °C/W Thermal Resistance, Junction-to-ambient, max Rth,j-a 62.5 *3 °C/W Note : 1. Pulse width limite...