MTBA6C12J4

CYStech Electronics Corp. Spec. No. : C973J4 Issued Date : 2014.06.13 Revised Date : 2014.10.02 Page No. : 1/13 N & P-Channel Enhancement Mode Power MOSFET MTBA6C12J4 BVDSS ID @ VGS=10V(-10V) RDSON(typ.) @VGS=(-)10V Features RDSON(typ.) @VGS=(-)4.5V Low Gate Charge Simple Drive Requirement RoHS compliant & Halogen-free package N-CH 120V 2A 176 mΩ 183 mΩ P-CH -120V -1.6A 246 mΩ 276 mΩ Equivalent Circuit MTBA6C12J4 Outline TO-252-4L G：Gate D：Drain S：Source Absolute Maximum Ratings (TA=25°C, unless otherwise noted) Parameter Symbol Limits N-channel P-channel Drain-Source Voltage VDS 120 -120 Gate-Source Voltage VGS ±20 ±20 Continuous Drain Current @ TC=25°C, VGS=10V(-10V) (Note1) 8.0 -6.8 Continuous Drain Current @ TC=100°C, VGS=10V(-10V) (Note1) Continuous Drain Current @ TA=25°C, VGS=10V(-10V) (Note4) ID 5.6 2.0 -4.8 -1.6 Continuous Drain Current @ TA=70°C, VGS=10V(-10V) (Note4) 1.6 -1.3 Pulsed Drain Current *1 (Note3) IDM 10 -8 Total Power Dissipation (TC=25℃) Total Power Dissipation (TC=100℃) (Note1) (Note1) PD 25 12.5 Total Power Dissipation (TA=25℃) Total Power Dissipation (TA=70℃) (Note2) (Note2) PDSM 2.4 1.7 Operating Junction and Storage Temperature Range Tj, Tstg -55~+175 Unit V A W °C MTBA6C12J4 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C973J4 Issued Date : 2014.06.13 Revised Date : 2014.10.02 Page No. : 2/13 Thermal Data Parameter Symbol Value Unit Thermal Resistance, Junction-t...