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MTB060N06I3
N-Channel Enhancement Mode Power MOSFET
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CYStech Electronics Corp. Spec. No. : C708I3 Issued Date : 2014.04.30 Revised Date : 2015.05.05 Page No. : 1/8 N -Channel Enhancement Mode Power MOSFET MTB060N06I3 BVDSS ID@VGS=10V, TC=25°C RDSON(MAX)@VGS=10V, ID=10A RDSON(MAX)@VGS=5V, ID=8A 60V 16A 35mΩ(typ.) 40mΩ(typ.) Features Low Gate Charge Simple Drive Requirement Pb-free lead plating and hal...
CYStech
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MTB060N06I3
N-Channel Enhancement Mode Power MOSFET
- CYStech
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