RQK0608BQDQS

RQK0608BQDQS Silicon N Channel MOS FET Power Switching Features Low on-resistance RDS(on) = 120 mΩ typ.(at VGS = 4.5 V, ID = 1.6 A) Low drive current High speed switching VDSS : 60 V and capable of 2.5 V gate drive Outline RENESAS package code: PLZZ0004CA-A (Package name: UPAK R ) 1 2 3 4 1G Note: Marking is “BQ“. REJ03G1621-0100 Rev.1.00 Mar 03, 2008 2, 4 D 1. Gate 2. Drain 3. Source 4. Drain S 3 Absolute Maximum Ratings Item Symbol Drain to source voltage Gate to source voltage Drain current Drain peak current Body - drain diode reverse drain current Channel dissipation VDSS VGSS ID ID(pulse) Note1 IDR Pch Note2 Channel temperature Tch Storage temperature Tstg Notes: 1. PW ≤ 10 µs, Duty cycle ≤ 1% 2. When using the glass epoxy board (FR-4 40 × 40 × 1 mm) Ratings 60 ±12 3.2 10 3.2 1.5 150 –55 to +150 (Ta = 25°C) Unit V V A A A W °C °C REJ03G1621-0100 Rev.1.00 Mar 03, 2008 Page 1 of 7 RQK0608BQDQS Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Drain to source breakdown voltage V(BR)DSS 60 — — V ID = 10 mA, VGS = 0 Gate to source breakdown voltage V(BR)GSS +12 — — V IG = +100 µA, VDS = 0 Gate to source breakdown voltage V(BR)GSS –12 — — V IG = –100 µA, VDS = 0 Gate to source leak current IGSS — — +10 µA VGS = +10 V, VDS = 0 Gate to source leak current IGSS — — –10 µA VGS = –10 V, VDS = 0 Zero gate voltage drain current IDSS — — 1 µA VDS = 60 V, VGS = 0 Gate to source cutoff voltage...