RQK0601AGDQS

RQK0601AGDQS Silicon N Channel MOS FET Power Switching Features Low on-resistance RDS(on) = 56 mΩ typ (VGS = 10 V, ID = 2.5 A) Low drive current High speed switching 4.5 V gate drive Outline RENESAS package code: PLZZ0004CA-A (Package name: UPAK R ) 1 2 3 4 Note: Marking is “AG”. REJ03G0575-0400 Rev.4.00 Jun 22, 2006 2, 4 D 1. Gate 1 G 2. Drain 3. Source 4. Drain S 3 *UPAK is a trademark of Renesas Technology Corp. Absolute Maximum Ratings Item Symbol Drain to source voltage VDSS Gate to source voltage VGSS Drain current Drain peak current ID ID Note1 (pulse) Body - drain diode reverse drain current Channel dissipation Channel dissipation IDR Pch Note2 Pch Note1 (pulse) Channel temperature Tch Storage temperature Tstg Notes: 1. PW ≤ 1 s, duty cycle ≤ 1% 2. When using the glass epoxy board (FR-4: 40 x 40 x 1 mm) Ratings 60 ±20 5 7.3 5 1.5 5 150 –55 to +150 (Ta = 25°C) Unit V V A A A W W °C °C Rev.4.00 Jun 22, 2006 page 1 of 6 RQK0601AGDQS Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Drain to source leak current Gate to source cutoff voltage Drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss 60 ±20 — — 1.0 — — 5.2 — — — — — — — 56 65 8.7 540 75 — V ID = 10 mA, VGS = 0 — V IG = ±100 µA,...