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RQK0301FGDQS

Renesas
Part Number RQK0301FGDQS
Manufacturer Renesas
Description N-Channel MOSFET
Published Apr 28, 2016
Detailed Description RQK0301FGDQS Silicon N Channel MOS FET Power Switching Features • Low on-resistance RDS(on) = 28 mΩ typ (VGS = 10 V, ID ...
Datasheet PDF File RQK0301FGDQS PDF File

RQK0301FGDQS
RQK0301FGDQS

Overview
RQK0301FGDQS Silicon N Channel MOS FET Power Switching Features • Low on-resistance RDS(on) = 28 mΩ typ (VGS = 10 V, ID = 3 A) • Low drive current • High speed switching • 4.
5 V gate drive Outline RENESAS package code: PLZZ0004CA-A (Package name: UPAK R ) 1 2 3 4 Note: Marking is “FG”.
REJ03G1269-0300 Rev.
3.
00 Jun 22, 2006 2, 4 D 1.
Gate 1 G 2.
Drain 3.
Source 4.
Drain S 3 *UPAK is a trademark of Renesas Technology Corp.
Absolute Maximum Ratings Item Symbol Drain to source voltage VDSS Gate to source voltage VGSS Drain current Drain peak current ID ID Note1 (pulse) Body - drain diode reverse drain current Channel dissipation Channel dissipation IDR Pch Note2 Pch Note1 (pulse...


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