RQK0204TGDQA
Silicon N Channel MOS FET Power Switching
Features
Low on-resistance RDS(on) = 100 mΩ typ (VGS = 4.5 V, ID = 1.2 A)
Low drive current High speed switching 2.5 V gate drive
Outline
RENESAS Package code: PLSP0003ZB-A (Package name: MPAK)
3
Note: Marking is “TG”.
1 2
Preliminary Datasheet
R07DS0304EJ0500 Rev.5.00
Jan 10, 2014
3 D
G 1. So...
