SMD Type
Transistors
PNP Medium Power Transistors BSR30,BSR31,BSR33
Features
High current (max. 1 A) Low voltage (max...
SMD Type
Transistors
PNP Medium Power
Transistors BSR30,BSR31,BSR33
Features
High current (max. 1 A) Low voltage (max. 80 V).
SOT-89
4.50+0.1 -0.1
1.80+0.1 -0.1
0.48+0.1 -0.1
0.53+0.1 -0.1
+0.12.50 -0.1
+0.14.00 -0.1
Unit: mm 1.50+0.1
-0.1
0.44+0.1 -0.1
+0.10.80 -0.1
+0.12.60 -0.1
+0.10.40 -0.1
3.00+0.1 -0.1
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
BSR30,BSR31
BSR33
Collector-emitter voltage
BSR30,BSR31
BSR33
Emitter-base voltage
Collector current
Peak collector current
Peak base current
Total power dissipation
Storage temperature
Junction temperature
Operating ambient temperature
Thermal resistance from junction to ambient
Thermal resistance from junction to soldering point
Symbol
VCBO
VCEO
VEBO IC ICM IBM Ptot Tstg Tj
Ramb Rth(j-a) Rth(j-s)
Rating -70 -90 -60 -80 -5 -1 -2 -200 1.35
-65 to +150 150
-65 to +150 93 13
Unit V V V V V A A mA W
K/W K/W
1. Base 2. Collector 3. Emiitter
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SMD Type
Transistors
BSR30,BSR31,BSR33
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current DC current gain *
DC current gain *
DC current gain *
BSR30 BSR31; BSR33 BSR30 BSR31,BSR33 BSR30 BSR31,BSR33
collector-emitter saturation voltage *
base-emitter saturation voltage *
Transition frequency * Pulse test: tp = 300 ìs; ä
0.01.
Symbol ICBO IEBO
Testconditons IE = 0; VCB = -60 V IE = 0; VCB = -60 V; Tj = 150 IC = 0; VEB = -5 V
hFE IC = -100 mA; VCE = -5 V;
hFE IC = -100...
