SMD Type
PNP Silicon AF Transistors BCX69
Transistors
Features
For general AF applications. High collector current. H...
SMD Type
PNP Silicon AF
Transistors BCX69
Transistors
Features
For general AF applications. High collector current. High current gain. Low collector-emitter saturation voltage.
SOT-89
4.50+0.1 -0.1
1.80+0.1 -0.1
0.48+0.1 -0.1
0.53+0.1 -0.1
+0.12.50 -0.1
+0.14.00 -0.1
Unit: mm 1.50+0.1
-0.1
0.44+0.1 -0.1
+0.10.80 -0.1
+0.12.60 -0.1
+0.10.40 -0.1
3.00+0.1 -0.1
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Peak collector current Base current Peak base current Total power dissipation Junction temperature Storage temperature Junction - soldering point
Symbol VCBO VCEO VEBO IC ICM IB IBM Ptot Tj Tstg RthJS
Rating 20 25 5 1 2 100 200 1 150
-65 to +150 20
Unit V V V A A mA mA W
K/W
1. Base 2. Collector 3. Emiitter
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SMD Type
Transistors
Electrical Characteristics Ta = 25
Parameter Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage
Collector cutoff current
DC current gain *
BCX69
DC current gain *
BCX69-10
BCX69-16
BCX69-25
DC current gain *
Collector-emitter saturation voltage *
Base-emitter voltage *
Transition frequency * Pulse test: t 300ìs, D = 2%.
BCX69
Symbol
Testconditons
Min Typ Max Unit
V(BR)CEO IC = 30 mA, IB = 0
20 V
V(BR)CBO IC = 10 ìA, IB = 0
25 V
V(BR)EBO IE = 1 ìA, IC = 0
5V
ICBO
VCB = 25 V, IE = 0 VCB = 25 V, IE = 0 , TA = 150
100 nA 100 ìA
hFE IC = 5 mA, VCE = 10 V
50
85 3...
