BCW68G

BCW68 PNP Silicon Epitaxial Planar Transistor for high current application The transistor is subdivided into three groups F, G and H according to its DC current gain. Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Peak Collector Current Base Current Peak Base Current Power Dissipation Junction Temperature Storage Temperature Range SOT-23 Plastic Package Symbol -VCBO -VCEO -VEBO -IC -ICM -IB -IBM Ptot Tj TS Value 60 45 5 800 1 100 200 200 150 - 55 to + 150 Unit V V V mA A mA mA mW OC OC SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 06/03/2007 BCW68 Characteristics at Ta = 25 OC Parameter DC Current Gain at -VCE = 10 V, -IC = 100 µA at -VCE = 1 V, -IC = 10 mA at -VCE = 1 V, -IC = 100 mA at -VCE = 2 V, -IC = 500 mA Collector Cutoff Current at -VCB = 45 V Emitter Cutoff Current at -VEB = 4 V Collector Base Breakdown Voltage at -IC = 10 µA Collector Emitter Breakdown Voltage at -IC = 10 mA Emitter Base Breakdown Voltage at -IE = 10 µA Collector Emitter Saturation Voltage at -IC = 100 mA, -IB = 10 mA Collector Emitter Saturation Voltage at -IC = 500 mA, -IB = 50 mA Base Emitter Saturation Voltage at -IC = 100 mA, -IB = 10 mA Base Emitter Saturation Voltage at -IC = 500 mA, -IB = 50 mA Transition Frequency at -VCE = 5 V, -IC = 50 mA, f = 100 MHz Collector Base Capacitance at -V...