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2SD965A

SeCoS

NPN Transistor

Elektronische Bauelemente 2SD965A 5A, 40V NPN Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” ...


SeCoS

2SD965A

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Description
Elektronische Bauelemente 2SD965A 5A, 40V NPN Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Audio amplifier Flasg unit of camera Switching circuit CLASSIFICATION OF hFE(2) Rank Q Range 230 - 380 R 340 - 600 S 560 - 800 SOT-89 B 1 C2 E3 A EC 4 BD FG H J K L REF. A B C D E F Millimeter Min. Max. 4.40 3.94 4.60 4.25 1.40 1.60 2.30 2.60 1.50 1.70 0.89 1.20 REF. G H J K L Millimeter Min. Max. 0.40 0.58 1.50 TYP 3.00 TYP 0.32 0.52 0.35 0.44 ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Rating Collector-Base Voltage VCBO 40 Collector-Emitter Voltage VCEO 30 Emitter-Base Voltage VEBO 7 Collector Current-Continuous IC 5 Collector Power Dissipation PC 750 Junction & Storage Temperature TJ, TSTG 150, -55~150 Unit V V V A mW °C ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Collector-Base breakdown voltage V(BR)CBO Collector-Emitter Breakdown Voltage V(BR)CEO 40 30 - - Emitter-Base Breakdown voltage V(BR)EBO 7 - - Collector Cut-Off Current Emitter Cut-Off Current ICBO IEBO - - 0.1 - 0.1 DC Current Gain hFE(1) - 200 - hFE(2) 230 - 800 hFE(3) 150 - - Collector-Emitter Saturation Voltage VCE(sat) - - 1 Transition Frequency Output Capacitance fT COB - 150 - 50 Unit Test Condition V IC=0.1mA, IE=0 V IC=1mA, IB=0 V IE=10µA, IC=0 µA VCB=10V, IE=0 µA VEB=7 V, ...




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