2SD667A

DC COMPONENTS CO., LTD. R DISCRETE SEMICONDUCTORS 2SD667A TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for low frequency power amplifier applications. Pinning 1 = Emitter 2 = Collector 3 = Base Absolute Maximum Ratings(TA=25oC) Characteristic Symbol Rating Collector-Base Voltage Collector-Emitter Voltage VCBO VCEO 120 100 Emitter-Base Voltage VEBO 5 Collector Current (DC) Collector Current (pulse) IC 1 IC 2 Total Power Dissipation PD 900 Junction Temperature Storage Temperature TJ TSTG +150 -55 to +150 Unit V V V A A mW oC oC TO-92 .190(4.83) .170(4.33) .190(4.83) .170(4.33) .500 (12.70) Min 2o Typ 2o Typ .050 (1.27)Typ .022(0.56) .014(0.36) .100 (2.54) Typ .022(0.56) .014(0.36) 321 .148(3.76) .132(3.36) .050 5oTyp. 5oTyp. (1.27)Typ Dimensions in inches and (millimeters) Electrical Characteristics (Ratings at 25oC ambient temperature unless otherwise specified) Characteristic Symbol Min Typ Max Unit Test Conditions Collector-Base Breakdown Volatge BVCBO 120 - - V IC=10µA, IE=0 Collector-Emitter Breakdown Voltage BVCEO 100 - - V IC=1mA, IB=0 Emitter-Base Breakdown Volatge BVEBO 5 - - V IE=10µA, IC=0 Collector Cutoff Current Collector-Emitter Saturation Voltage(1) Base-Emitter On Voltage(1) ICBO VCE(sat) VBE(on) - - 10 µA VCB=100V, IE=0 - 1 V IC=500mA, IB=50mA - 1.5 V IC=150mA, VCE=5V DC Current Gain(1) hFE1 60 - 200 - IC=150mA, VCE=5V hFE2 30 - - - IC=500mA, VCE=5V Transitio...