2SD2114

Elektronische Bauelemente 2SD2114 0.5A , 25V NPN Plastic-Encapsulate Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURE  High DC Current Gain.  High Emitter-Base Voltage. VEBO=12V (Min.) CLASSIFICATION OF hFE Product-Rank 2SD2114-V Range 820~1800 Marking BBV SOT-23 A L 3 Top View CB 12 KE 1 3 2 D F GH J PACKAGE INFORMATION Package MPQ SOT-23 3K Leader Size 7 inch REF. A B C D E F Millimeter Min. Max. 2.80 3.04 2.10 2.55 1.20 1.40 0.89 1.15 1.78 2.04 0.30 0.50 REF. G H J K L Millimeter Min. Max. 0.09 0.18 0.45 0.60 0.08 0.177 0.6 REF. 0.89 1.02 Collector  ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Ratings Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Junction, Storage Temperature VCBO VCEO VEBO IC PC TJ, TSTG 25 20 12 500 250 150, -55~150  Base  Emitter Unit V V V mA mW °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain Collector to Emitter Saturation Voltage Transition Frequency Collector Output Capacitance On Resistance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) fT Cob R(on) Min. 25 20 12 820 - Typ. 350 8 0.8 Max. 0.5 0.5 1800 0....