2SD1898

WILLAS SOT-89 Plastic-Encapsulate Transistors 2SD1898 TRANSISTOR (NPN) FEATURES z High Breakdown Voltage and Current z Excellent DC Current Gain Linearity z Pb-Free package is available RoHS product for packing code suffix ”G” Halogen free product for packing code suffix “H” z Low Collector-Emitter Saturation Voltage MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Value 100 80 5 1 500 250 150 -55~+150 SOT-89 1. BASE 2. COLLECTOR 3. EMITTER Unit V V V A mW ℃/W ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Symbol Test conditions Min Typ V(BR)CBO IC=50µA,IE=0 100 V(BR)CEO IC=1mA,IB=0 80 V(BR)EBO IE=50µA,IC=0 5 ICBO VCB=80V,IE=0 IEBO VEB=4V,IC=0 hFE VCE=3V, IC=500mA 82 VCE(sat) IC=500mA,IB=20mA fT VCE=10V,IC=50mA, f=100MHz 100 Cob VCB=10V, IE=0, f=1MHz 20 Max 1 1 390 0.4 Unit V V V µA µA V MHz pF CLASSIFICATION OF hFE RANK RANGE MARKING 2012-0 P 82–180 Q 120–270 DF R 180–390 WILLAS ELECTRONIC CORP. WILLAS SOT-89 Plas...