Elektronische Bauelemente
2SD1767
0.7A , 80V NPN Plastic Encapsulated Transistor
RoHS Compliant Product A suffix of “-...
Elektronische Bauelemente
2SD1767
0.7A , 80V
NPN Plastic Encapsulated
Transistor
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
FEATURES
High Breakdown Voltage and Current Excellent DC Current Gain Linearity Complementary to 2SB1189
CLASSIFICATION OF hFE
Product-Rank 2SD1767-P
Range
82~180
Marking
DCP
2SD1767-Q 120~270 DCQ
2SD1767-R 180~390 DCR
PACKAGE INFORMATION
Package
MPQ
SOT-89
1K
Leader Size 7 inch
1
Base
SOT-89
4
A
1
B
2
C
3
E
EC
Collector
2
3
Emitter
B F
G H
J
D
K L
REF.
A B C D E F
Millimeter Min. Max.
4.40 3.94 1.40
4.60 4.25 1.60
2.25 2.60
1.50 1.85
0.89 1.20
REF.
G H J K L
Millimeter Min. Max. 0.40 0.58
1.50 TYP 3.00 TYP 0.32 0.52
0.35 0.44
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Ratings
Collector-Base Voltage
VCBO
80
Collector-Emitter Voltage
VCEO
80
Emitter-Base Voltage
VEBO
5
Collector Current-Continuous
IC
700
Collector Power Dissipation
PC 500
Maximum Junction to Ambient
RθJA
250
Junction & Storage Temperature
TJ, TSTG
150, -55~150
Unit V V V mA mW
°C / W °C
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test conditions
Collector-Base Breakdown Voltage
V(BR)CBO
80
-
- V IC=50µA, IE=0
Collector-Emitter Breakdown Voltage
V(BR)CEO
80
-
- V IC=2mA, IB=0
Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current
V(BR)EBO ICBO IEBO
5
--
- - V IE=50µA,...