MTEH0N20L3

CYStech Electronics Corp. Spec. No. : C882L3 Issued Date : 2012.11.16 Revised Date : 2012.12.19 Page No. : 1/8 N-Channel Enhancement Mode MOSFET MTEH0N20L3 Features Single Drive Requirement Low On-resistance Fast Switching Characteristic Pb-free lead plating and halogen-free package BVDSS ID RDSON@VGS=10V, ID=0.5A RDSON@VGS=5V, ID=0.1A 200V 1A 0.98Ω (typ) 0.97Ω (typ) Symbol MTEH0N20L3 Outline SOT-223 G：Gate S：Source D：Drain D S D G Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @VGS=10V, TA=25°C Continuous Drain Current @VGS=10V, TA=70°C Pulsed Drain Current *1 Single Pulse Avalanche Energy @ L=10mH, ID=1A , VDD=50V Total Power Dissipation TA=25℃ *2 TA=70℃ Operating Junction and Storage Temperature Range Note : *1. Pulse width limited by safe operating area *2. Surface mounted on a 1 in2 pad of 2 oz. copper, t≤10s. Symbol VDS VGS ID ID IDM EAS PD Tj, Tstg MTEH0N20L3 Limits 200 ±30 1 0.8 4 5 2.5 1.6 -55~+150 Unit V V A A A mJ W °C CYStek Product Specification CYStech Electronics Corp. Spec. No. : C882L3 Issued Date : 2012.11.16 Revised Date : 2012.12.19 Page No. : 2/8 Thermal Data Parameter Symbol Value Thermal Resistance, Junction-to-case, max Rth,j-c 25 Thermal Resistance, Junction-to-ambient, max Rth,j-a 50 (Note) Note : Surface mounted on a 1 in2 pad of 2 oz. copper, t≤10s; 120°C/W when mounted on minimum copper pad. Unit °C/W °C/W Electrical Characteristics (...