MTEH0N25J3

CYStech Electronics Corp. Spec. No. : C895J3 Issued Date : 2014.04.23 Revised Date : 2014.04.28 Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET MTEH0N25J3 BVDSS ID@VGS=10V RDSON(TYP) VGS=10V, ID=3A VGS=6V, ID=2A 250V 3.5A 720mΩ 720mΩ Features Low Gate Charge Simple Drive Requirement Pb-free lead plating and halogen-free package Equivalent Circuit MTEH0N25J3 Outline TO-252(DPAK) G：Gate D：Drain S：Source G DS Ordering Information Device Package MTEH0N25J3-0-T3-G TO-252 (Pb-free lead plating and halogen-free package) Shipping 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name MTEH0N25J3 CYStek Product Specification CYStech Electronics Corp. Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ VGS=10V, TC=25°C Continuous Drain Current @ VGS=10V, TC=100°C Continuous Drain Current @ VGS=10V, TA=25°C Continuous Drain Current @ VGS=10V, TA=70°C Pulsed Drain Current Avalanche Current Avalanche Energy @ L=2mH, ID=4A, VDD=50V Repetitive Avalanche Energy@ L=0.1mH Total Power Dissipation @TC=25℃ (Note 1) Total Power Dissipation @TC=100℃ (Note 1) Total Power Dissipation @TA=25℃ (Note 2) Total Power Dissipation @TA=70℃ (Note 2) Operating Junction and Storage Temperature Rang...