MTEF1P15AN6

CYStech Electronics Corp. P-Channel Enhancement Mode Power MOSFET MTEF1P15AN6 Spec. No. : C896N6 Issued Date : 2013.02.21 Revised Date : 2015.04.30 Page No. : 1/9 Description The MTEF1P15AN6 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The SOT-26 package is universally preferred for all commercial-industrial surface mount applications. Features Simple drive requirement Low on-resistance Small package outline Pb-free lead plating and halogen-free package Equivalent Circuit MTEF1P15AN6 G：Gate S：Source D：Drain Absolute Maximum Ratings (Ta=25°C) Drain-Source Voltage Parameter Gate-Source Voltage TC=25 °C Continuous Drain Current TC=70 °C TA=25 °C (Note 1) TA=70 °C (Note 1) Pulsed Drain Current (Note 2, 3) TC=25 °C Total Power Dissipation TC=70 °C TA=25 °C TA=70 °C Operating Junction Temperature and Storage Temperature Range Symbol VDS VGS ID IDM PD Tj, Tstg Limits -150 ±20 -1.7 -1.4 -1.3 -1.0 -6.8 3.2 2.1 2 1.25 -55~+150 Unit V A W °C Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max (Note 1) MTEF1P15AN6 Symbol Rth,j-c RθJA Value 39 62.5 Unit °C/W CYStek Product Specification CYStech Electronics Corp. Spec. No. : C896N6 Issued Date : 2013.02.21 Revised Date : 2015.04.30 Page No. : 2/9 Note : 1.Surface mounted on 1 in² copper pad of FR-4 board, t≤5 sec. 15...