P-Channel Enhancement Mode Power MOSFET
CYStech Electronics Corp.
P-Channel Enhancement Mode Power MOSFET
MTEF1P15N6
Spec. No. : C896N6 Issued Date : 2013.02.2...
Description
CYStech Electronics Corp.
P-Channel Enhancement Mode Power MOSFET
MTEF1P15N6
Spec. No. : C896N6 Issued Date : 2013.02.21 Revised Date : 2013.11.11 Page No. : 1/9
Description
The MTEF1P15N6 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The SOT-26 package is universally preferred for all commercial-industrial surface mount applications.
Features
Simple drive requirement Low on-resistance Small package outline Pb-free lead plating package
Equivalent Circuit
MTEF1P15N6
G:Gate S:Source D:Drain
Absolute Maximum Ratings (Ta=25°C)
Drain-Source Voltage Gate-Source Voltage
Parameter
Continuous Drain Current
Pulsed Drain Current (Note 2, 3)
TC=25 °C TC=70 °C TA=25 °C (Note 1) TA=70 °C (Note 1)
TC=25 °C
Total Power Dissipation
TC=70 °C TA=25 °C
TA=70 °C
Operating Junction Temperature and Storage Temperature Range
Symbol VDS
VGS
ID
IDM
PD
Tj, Tstg
Limits -150 ±20 -1.4 -1.1 -1.1 -0.88 -5.6 3.2 2.1
2 1.25 -55~+150
Unit V A
W °C
MTEF1P15N6
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C896N6 Issued Date : 2013.02.21 Revised Date : 2013.11.11 Page No. : 2/9
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max (Note 1)
Rth,j-c RθJA
39 62.5
°C/W
Note : 1.Surface mounted on 1 in² copper pad of FR-4 board, t≤5 sec. 156℃/W when mounted ...
Similar Datasheet