MTE130N20KF3

CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTE130N20KF3 Spec. No. : C952F3 Issued Date : 2014.06.03 Revised Date : Page No. : 1/9 Features Low Gate Charge Simple Drive Requirement ESD Diode Protected Gate Fast Switching Characteristic Pb-free lead plating and RoHS compliant package BVDSS ID RDSON(TYP) @ VGS=10V, ID=9A 200V 18A 143mΩ Equivalent Circuit MTE130N20KF3 Outline TO-263 G：Gate D：Drain S：Source G DS Ordering Information Device MTE130N20KF3-0-T7-S Package Shipping TO-263 (Pb-free lead plating and RoHS compliant package) 800 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T7 : 800 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name MTE130N20KF3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C952F3 Issued Date : 2014.06.03 Revised Date : Page No. : 2/9 Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C(silicon limit) Continuous Drain Current @ TC=100°C(silicon limit) Pulsed Drain Current (Note 3) Continuous Drain Current @ TA=25°C (Note 2) Continuous Drain Current @ TA=70°C (Note 2) Avalanche Current (Note 3) Avalanche Energy @ L=100μH, ID=10A, VDD=50V (Note 2) Power Dissipation TC=25°C TC=100°C (Note 1) (Note 1) Power Dissipation TA=25°C TA=70°C (Note 2) (Note 2) ...