MTE130N20KJ3

CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTE130N20KJ3 Spec. No. : C952J3 Issued Date : 2014.02.27 Revised Date : 2014.03.05 Page No. : 1/9 Features Low Gate Charge Simple Drive Requirement ESD Diode Protected Gate Fast Switching Characteristic Pb-free lead plating and halogen-free package BVDSS ID RDSON(TYP) @ VGS=10V, ID=9A 200V 18A 142mΩ Symbol MTE130N20KJ3 Outline TO-252(DPAK) G：Gate D：Drain S：Source G DS Ordering Information Device MTE130N20KJ3-0-T3-G Package Shipping TO-252 (Pb-free lead plating and halogen-free package) 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name MTE130N20KJ3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C952J3 Issued Date : 2014.02.27 Revised Date : 2014.03.05 Page No. : 2/9 Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C Continuous Drain Current @ TC=100°C Pulsed Drain Current Continuous Drain Current @ TA=25°C Continuous Drain Current @ TA=70°C Avalanche Current Avalanche Energy @ L=100μH, ID=9A, VDD=50V Power Dissipation TC=25°C TC=100°C Power Dissipation TA=25°C TA=70°C Operating Junction and Storage Temperature (Note 1) (Note 1) (Note 3) (Note 4) (Note 4) (Note 3) (Note 3) (...