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MTE130N20KFP

CYStech

N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTE130N20KFP Spec. No. : C952FP Issued Date : 2013.12...


CYStech

MTE130N20KFP

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CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTE130N20KFP Spec. No. : C952FP Issued Date : 2013.12.24 Revised Date : Page No. : 1/ 8 BVDSS 200V ID @ VGS=10V 17A RDS(ON)@VGS=10V, ID=9A 134 mΩ(typ) Features ESD protected Simple Drive Requirement Low Gate Charge Fast Switching Characteristic Insulating package, front/back side insulating voltage=2500V(AC) RoHS compliant package Symbol MTE130N20KFP Outline TO-220FP G:Gate D:Drain S:Source GDS Ordering Information Device MTE130N20KFP-0-UB-S Package TO-220FP (RoHS compliant package) Shipping 50 pcs/tube, 20 tubes/box, 4 boxes / carton Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, UB : 50 pcs / tube, 20 tubes/box Product rank, zero for no rank products Product name MTE130N20KFP CYStek Product Specification CYStech Electronics Corp. Spec. No. : C952FP Issued Date : 2013.12.24 Revised Date : Page No. : 2/ 8 Absolute Maximum Ratings (TC=25°C) Parameter Drain-Source Voltage (Note 1) Gate-Source Voltage Continuous Drain Current @TC=25°C, VGS=10V (Note 1) Continuous Drain Current @TC=100°C, VGS=10V (Note 1) Continuous Drain Current @TA=25°C, VGS=10V (Note 2) Continuous Drain Current @TA=70°C, VGS=10V (Note 2) Pulsed Drain Current @ VGS=10V (Note 3) Avalanche Current (Note 3) Single Pulse Avalanche Energy @ L=0.1mH, ID=10 Amps, VDD=50V (Note 2) TC=25°C (Note 1) Power Dissipation TC=100°C ...




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