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VS-80CNQ045APbF Dataheets PDF



Part Number VS-80CNQ045APbF
Manufacturers Vishay
Logo Vishay
Description High Performance Schottky Rectifier
Datasheet VS-80CNQ045APbF DatasheetVS-80CNQ045APbF Datasheet (PDF)

VS-80CNQ035APbF, VS-80CNQ040APbF, VS-80CNQ045APbF www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, New Generation 3, D-61 Package, 2 x 40 A VS-80CNQ...APbF D-61-8 VS-80CNQ...ASMPbF Base common cathode 12 Anode Common 1 cathode 3 Anode 2 D-61-8-SM VS-80CNQ...ASLPbF 12 Anode Common 1 cathode 3 Anode 2 Base common cathode D-61-8-SL 1 Anode 1 3 Anode 2 PRODUCT SUMMARY Package IF(AV) VR VF at IF IRM max. TJ max. Diode variation EAS D-61 2 x 40 A 35 V, 40 V, 45.

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VS-80CNQ035APbF, VS-80CNQ040APbF, VS-80CNQ045APbF www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, New Generation 3, D-61 Package, 2 x 40 A VS-80CNQ...APbF D-61-8 VS-80CNQ...ASMPbF Base common cathode 12 Anode Common 1 cathode 3 Anode 2 D-61-8-SM VS-80CNQ...ASLPbF 12 Anode Common 1 cathode 3 Anode 2 Base common cathode D-61-8-SL 1 Anode 1 3 Anode 2 PRODUCT SUMMARY Package IF(AV) VR VF at IF IRM max. TJ max. Diode variation EAS D-61 2 x 40 A 35 V, 40 V, 45 V 0.51 V 250 mA at 125 °C 150 °C Common cathode 54 mJ FEATURES • 150 °C TJ operation • Center tap module • Very low forward voltage drop • High frequency operation • High power discrete • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • Guard ring for enhanced ruggedness and long term reliability • New fully transfer-mould low profile, small footprint, high current package • Through-hole versions are currently available for use in lead (Pb)-free applications (“PbF” suffix) • Designed and qualified for industrial level • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION The center tap Schottky rectifier module series has been optimized for very low forward voltage drop, with moderate leakage. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection.        MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS IF(AV) VRRM IFSM VF TJ Rectangular waveform Range tp = 5 μs sine 40 Apk, TJ = 125 °C (per leg) Range VALUES 80 35 to 45 5800 0.47 -55 to +150 UNITS A V A V °C VOLTAGE RATINGS PARAMETER Maximum DC reverse voltage Maximum working peak reverse voltage SYMBOL VR VRWM VS-80CNQ035APbF 35 VS-80CNQ040APbF 40 VS-80CNQ045APbF 45 UNITS V Revision: 09-Dec-14 1 Document Number: 94255 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-80CNQ035APbF, VS-80CNQ040APbF, VS-80CNQ045APbF www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Maximum average forward current  See fig. 5 per leg per device IF(AV) TEST CONDITIONS 50 % duty cycle at TC = 114 °C, rectangular waveform VALUES 40 80 Maximum peak one cycle non-repetitive surge current per leg See fig. 7 Non-repetitive avalanche energy per leg Repetitive avalanche current per leg 5 μs sine or 3 μs rect. pulse Following any rated 5800 IFSM load condition and with 10 ms sine or 6 ms rect. pulse rated VRRM applied 750 EAS TJ = 25 °C, IAS = 8 A, L = 1.7 mH 54 IAR Current decaying linearly to zero in 1 μs Frequency limited by TJ maximum VA = 1.5 x VR typical 8 UNITS A mJ A ELECTRICAL SPECIFICATIONS PARAMETER Maximum forward voltage drop per leg See fig. 1 Maximum reverse leakage current per leg See fig. 2 Threshold voltage Forward slope resistance Maximum junction capacitance per leg Typical series inductance per leg Maximum voltage rate of change Note (1) Pulse width < 300 μs, duty cycle < 2 % SYMBOL VFM (1) IRM (1) VF(TO) rt CT LS dV/dt 40 A 80 A 40 A 80 A TJ = 25 °C TJ = 125 °C TEST CONDITIONS TJ = 25 °C TJ = 125 °C VR = Rated VR TJ = TJ maximum VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C Measured lead to lead 5 mm from package body Rated VR VALUES 0.52 0.66 0.47 0.61 5 250 0.26 3.93 2600 5.5 10 000 UNITS V mA V m pF nH V/μs THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS Maximum junction and storage  temperature range TJ, TStg Maximum thermal resistance,  per leg junction to case per package RthJC DC operation (see fig. 4) DC operation Typical thermal resistance,  case to heatsink RthCS Mounting surface, smooth and greased Device flatness < 5 mils Approximate weight Mounting torque minimum maximum Case style D-61 Marking device Case style D-61-8-SM Case style D-61-8-SL VALUES UNITS -55 to +150 °C 0.85 0.42 °C/W 0.30 7.8 g 0.28 oz. 40 (35) 58 (50) kgf · cm (lbf · in) 80CNQ035A 80CNQ040A 80CNQ045A 80CNQ035ASM 80CNQ040ASM 80CNQ045ASM 80CNQ035ASL 80CNQ040ASL 80CNQ045ASL Revision: 09-Dec-14 2 Document Number: 94255 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IF - Instantaneous Forward Current (A) VS-80CNQ035APbF, VS-80CNQ040APbF, VS-80CNQ045APbF www.vishay.com Vishay Semiconductors 1000 100 TJ = 150 °C 10 TJ = 125 °C TJ = 25 °C 1 0 0.2 0.4 0.6 0.8 1.0 1.2 VFM - .


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