VS-80CNQ035APbF, VS-80CNQ040APbF, VS-80CNQ045APbF
www.vishay.com
Vishay Semiconductors
High Performance Schottky Rectifier, New Generation 3, D-61 Package, 2 x 40 A
VS-80CNQ...APbF
D-61-8 VS-80CNQ...ASMPbF
Base common cathode
12 Anode Common
1 cathode
3 Anode
2
D-61-8-SM VS-80CNQ...ASLPbF
12 Anode Common
1 cathode
3 Anode
2
Base common cathode
D-61-8-SL
1 Anode
1
3 Anode
2
PRODUCT SUMMARY
Package IF(AV) VR
VF at IF IRM max. TJ max. Diode variation
EAS
D-61 2 x 40 A 35 V, 40 V, 45 V 0.51 V 250 mA at 125 °C 150 °C Common cathode 54 mJ
FEATURES
• 150 °C TJ operation • Center tap module
• Very low forward voltage drop
• High frequency operation
• High power discrete
• High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance
• Guard ring for enhanced ruggedness and long term reliability
• New fully transfer-mould low profile, small footprint, high current package
• Through-hole versions are currently available for use in lead (Pb)-free applications (“PbF” suffix)
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
DESCRIPTION
The center tap Schottky rectifier module series has been optimized for very low forward voltage drop, with moderate leakage. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV) VRRM IFSM VF TJ
Rectangular waveform Range tp = 5 μs sine 40 Apk, TJ = 125 °C (per leg) Range
VALUES 80
35 to 45 5800 0.47
-55 to +150
UNITS A V A V °C
VOLTAGE RATINGS
PARAMETER Maximum DC reverse voltage Maximum working peak reverse voltage
SYMBOL VR
VRWM
VS-80CNQ035APbF 35
VS-80CNQ040APbF 40
VS-80CNQ045APbF 45
UNITS V
Revision: 09-Dec-14
1 Document Number: 94255
For technical questions within your region:
[email protected],
[email protected],
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-80CNQ035APbF, VS-80CNQ040APbF, VS-80CNQ045APbF
www.vishay.com
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average forward current See fig. 5
per leg per device
IF(AV)
TEST CONDITIONS 50 % duty cycle at TC = 114 °C, rectangular waveform
VALUES 40 80
Maximum peak one cycle non-repetitive surge current per leg See fig. 7
Non-repetitive avalanche energy per leg
Repetitive avalanche current per leg
5 μs sine or 3 μs rect. pulse Following any rated
5800
IFSM load condition and with
10 ms sine or 6 ms rect. pulse rated VRRM applied
750
EAS TJ = 25 °C, IAS = 8 A, L = 1.7 mH
54
IAR
Current decaying linearly to zero in 1 μs Frequency limited by TJ maximum VA = 1.5 x VR typical
8
UNITS
A
mJ A
ELECTRICAL SPECIFICATIONS
PARAMETER
Maximum forward voltage drop per leg See fig. 1
Maximum reverse leakage current per leg See fig. 2 Threshold voltage Forward slope resistance Maximum junction capacitance per leg Typical series inductance per leg Maximum voltage rate of change Note (1) Pulse width < 300 μs, duty cycle < 2 %
SYMBOL
VFM (1)
IRM (1) VF(TO)
rt CT LS dV/dt
40 A 80 A 40 A 80 A TJ = 25 °C TJ = 125 °C
TEST CONDITIONS TJ = 25 °C TJ = 125 °C VR = Rated VR
TJ = TJ maximum
VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C Measured lead to lead 5 mm from package body Rated VR
VALUES 0.52 0.66 0.47 0.61 5 250 0.26 3.93 2600 5.5
10 000
UNITS
V
mA V m pF nH V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and storage temperature range
TJ, TStg
Maximum thermal resistance, per leg
junction to case
per package
RthJC
DC operation (see fig. 4) DC operation
Typical thermal resistance, case to heatsink
RthCS
Mounting surface, smooth and greased Device flatness < 5 mils
Approximate weight
Mounting torque
minimum maximum
Case style D-61
Marking device
Case style D-61-8-SM
Case style D-61-8-SL
VALUES UNITS
-55 to +150 °C
0.85 0.42 °C/W 0.30
7.8 g
0.28 oz.
40 (35) 58 (50)
kgf · cm (lbf · in)
80CNQ035A
80CNQ040A
80CNQ045A
80CNQ035ASM
80CNQ040ASM
80CNQ045ASM
80CNQ035ASL
80CNQ040ASL
80CNQ045ASL
Revision: 09-Dec-14
2 Document Number: 94255
For technical questions within your region:
[email protected],
[email protected],
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IF - Instantaneous Forward Current (A)
VS-80CNQ035APbF, VS-80CNQ040APbF, VS-80CNQ045APbF
www.vishay.com
Vishay Semiconductors
1000
100
TJ = 150 °C 10 TJ = 125 °C
TJ = 25 °C
1 0 0.2 0.4 0.6 0.8 1.0 1.2
VFM - .