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VS-20TQ0..PbF Series, VS-20TQ0..-N3
Vishay Semiconductors
Schottky Rectifier, 20 A
Base
cathode 2
TO-220AC
13 Cathode Anode
PRODUCT SUMMARY
Package IF(AV) VR
VF at IF IRM max.
TJ Diode variation
EAS
TO-220AC 20 A
35 V, 40 V, 45 V 0.51 V
105 mA at 125 °C 150 °C
Single die 27 mJ
FEATURES
• 150 °C TJ operation • Low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance
• Guard ring for enhanced ruggedness and long term reliability
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified according to JEDEC-JESD47
• Halogen-free according to IEC 61249-2-21 definition (-N3 only)
DESCRIPTION
The VS-20TQ... Schottky rectifier series has been optimized for very low forward voltage drop, with moderate leakage. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV)
Rectangular waveform
VRRM
Range
IFSM tp = 5 μs sine
VF 20 Apk, TJ = 125 °C TJ Range
VALUES 20
35 to 45 1800 0.51
- 55 to 150
UNITS A V A V °C
VOLTAGE RATINGS
PARAMETER
SYMBOL
Maximum DC reverse voltage
Maximum working peak reverse voltage
VR VRWM
VS20TQ035PbF
35
VS20TQ035-N3
35
VS20TQ040PbF
40
VS20TQ040-N3
40
VS20TQ045PbF
45
VS20TQ045-N3
45
UNITS V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average forward current See fig. 5
IF(AV)
Maximum peak one cycle non-repetitive surge current See fig. 7
IFSM
Non-repetitive avalanche energy
EAS
Repetitive avalanche current
IAR
TEST CONDITIONS
VALUES UNITS
50 % duty cycle at TC = 116 °C, rectangular waveform
5 µs sine or 3 µs rect. pulse 10 ms sine or 6 ms rect. pulse
Following any rated load condition and with rated VRRM applied
TJ = 25 °C, IAS = 4 A, L = 3.4 mH
Current decaying linearly to zero in 1 μs Frequency limited by TJ maximum VA = 1.5 x VR typical
20
1800 400 27
4
A
mJ A
Revision: 26-Aug-11
1 Document Number: 94167
For technical questions within your region:
[email protected],
[email protected],
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
VS-20TQ0..PbF Series, VS-20TQ0..-N3
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop See fig. 1
VFM (1)
Maximum reverse leakage curent See fig. 2
IRM (1)
Maximum junction capacitance Typical series inductance Maximum voltage rate of change
CT LS dV/dt
Note (1) Pulse width < 300 μs, duty cycle < 2 %
TEST CONDITIONS
20 A 40 A
TJ = 25 °C
20 A 40 A
TJ = 125 °C
TJ = 25 °C TJ = 125 °C
VR = Rated VR
VR = 5 VDC, (test signal range 100 kHz to 1 MHz) 25 °C
Measured lead to lead 5 mm from package body
Rated VR
VALUES 0.57 0.73 0.51 0.67 2.7 105 1400 8.0
10 000
UNITS
V
mA pF nH V/µs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and storage temperature range
TJ, TStg
Maximum thermal resistance, junction to case
RthJC
DC operation See fig. 4
Typical thermal resistance, case to heatsink
RthCS
Mounting surface, smooth and greased
Approximate weight
Mounting torque
minimum maximum
Marking device
Case style TO-220AC
VALUES - 55 to 150
UNITS °C
1.50 °C/W
0.50
2g
0.07 oz.
6 (5) 12 (10)
kgf ·cm (lbf ·in)
20TQ035
20TQ040
20TQ045
Revision: 26-Aug-11
2 Document Number: 94167
For technical questions within your region:
[email protected],
[email protected],
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IF - Instantaneous Forward Current (A)
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VS-20TQ0..PbF Series, VS-20TQ0..-N3
Vishay Semiconductors
1000
100
10 TJ = 150 °C TJ = 125 °C
1 TJ = 25 °C
0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 VFM - Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
10 000
IR - Reverse Current (mA)
1000 100 10 1 0.1
TJ = 150 °C
TJ = 125 °C TJ = 100 °C
TJ = 75 °C TJ = 50 °C
0.01
TJ = 25 °C
0.001 0 5 10 15 20 25 30 35 40 45
VR - Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
CT - Junction Capacitance (pF)
1000
TJ = 25 °C
100 0
10 20 30 40 50
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
ZthJC - Thermal Impedance (°C/W)
10
1
0.1
0.01
0.001 0.00001
Single pulse (thermal resistance)
D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08
P DM
t
1
t
2
Notes: 1. Duty factor D = t1/t2 . 2. Peak TJ = PDM x ZthJC + TC
0.0001
0.001
0.01
0.1
1
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJ.