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VS-20TQ035PbF Dataheets PDF



Part Number VS-20TQ035PbF
Manufacturers Vishay
Logo Vishay
Description Schottky Rectifier
Datasheet VS-20TQ035PbF DatasheetVS-20TQ035PbF Datasheet (PDF)

www.vishay.com VS-20TQ0..PbF Series, VS-20TQ0..-N3 Vishay Semiconductors Schottky Rectifier, 20 A Base cathode 2 TO-220AC 13 Cathode Anode PRODUCT SUMMARY Package IF(AV) VR VF at IF IRM max. TJ Diode variation EAS TO-220AC 20 A 35 V, 40 V, 45 V 0.51 V 105 mA at 125 °C 150 °C Single die 27 mJ FEATURES • 150 °C TJ operation • Low forward voltage drop • High frequency operation • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • Gua.

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www.vishay.com VS-20TQ0..PbF Series, VS-20TQ0..-N3 Vishay Semiconductors Schottky Rectifier, 20 A Base cathode 2 TO-220AC 13 Cathode Anode PRODUCT SUMMARY Package IF(AV) VR VF at IF IRM max. TJ Diode variation EAS TO-220AC 20 A 35 V, 40 V, 45 V 0.51 V 105 mA at 125 °C 150 °C Single die 27 mJ FEATURES • 150 °C TJ operation • Low forward voltage drop • High frequency operation • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • Guard ring for enhanced ruggedness and long term reliability • Compliant to RoHS Directive 2002/95/EC • Designed and qualified according to JEDEC-JESD47 • Halogen-free according to IEC 61249-2-21 definition (-N3 only) DESCRIPTION The VS-20TQ... Schottky rectifier series has been optimized for very low forward voltage drop, with moderate leakage. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS IF(AV) Rectangular waveform VRRM Range IFSM tp = 5 μs sine VF 20 Apk, TJ = 125 °C TJ Range VALUES 20 35 to 45 1800 0.51 - 55 to 150 UNITS A V A V °C VOLTAGE RATINGS PARAMETER SYMBOL Maximum DC reverse voltage Maximum working peak reverse voltage VR VRWM VS20TQ035PbF 35 VS20TQ035-N3 35 VS20TQ040PbF 40 VS20TQ040-N3 40 VS20TQ045PbF 45 VS20TQ045-N3 45 UNITS V ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Maximum average forward current See fig. 5 IF(AV) Maximum peak one cycle non-repetitive surge current See fig. 7 IFSM Non-repetitive avalanche energy EAS Repetitive avalanche current IAR TEST CONDITIONS VALUES UNITS 50 % duty cycle at TC = 116 °C, rectangular waveform 5 µs sine or 3 µs rect. pulse 10 ms sine or 6 ms rect. pulse Following any rated load condition and with rated VRRM applied TJ = 25 °C, IAS = 4 A, L = 3.4 mH Current decaying linearly to zero in 1 μs Frequency limited by TJ maximum VA = 1.5 x VR typical 20 1800 400 27 4 A mJ A Revision: 26-Aug-11 1 Document Number: 94167 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com VS-20TQ0..PbF Series, VS-20TQ0..-N3 Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL Maximum forward voltage drop See fig. 1 VFM (1) Maximum reverse leakage curent See fig. 2 IRM (1) Maximum junction capacitance Typical series inductance Maximum voltage rate of change CT LS dV/dt Note (1) Pulse width < 300 μs, duty cycle < 2 % TEST CONDITIONS 20 A 40 A TJ = 25 °C 20 A 40 A TJ = 125 °C TJ = 25 °C TJ = 125 °C VR = Rated VR VR = 5 VDC, (test signal range 100 kHz to 1 MHz) 25 °C Measured lead to lead 5 mm from package body Rated VR VALUES 0.57 0.73 0.51 0.67 2.7 105 1400 8.0 10 000 UNITS V mA pF nH V/µs THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS Maximum junction and storage temperature range TJ, TStg Maximum thermal resistance, junction to case RthJC DC operation See fig. 4 Typical thermal resistance, case to heatsink RthCS Mounting surface, smooth and greased Approximate weight Mounting torque minimum maximum Marking device Case style TO-220AC VALUES - 55 to 150 UNITS °C 1.50 °C/W 0.50 2g 0.07 oz. 6 (5) 12 (10) kgf ·cm (lbf ·in) 20TQ035 20TQ040 20TQ045 Revision: 26-Aug-11 2 Document Number: 94167 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IF - Instantaneous Forward Current (A) www.vishay.com VS-20TQ0..PbF Series, VS-20TQ0..-N3 Vishay Semiconductors 1000 100 10 TJ = 150 °C TJ = 125 °C 1 TJ = 25 °C 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 VFM - Forward Voltage Drop (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics 10 000 IR - Reverse Current (mA) 1000 100 10 1 0.1 TJ = 150 °C TJ = 125 °C TJ = 100 °C TJ = 75 °C TJ = 50 °C 0.01 TJ = 25 °C 0.001 0 5 10 15 20 25 30 35 40 45 VR - Reverse Voltage (V) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage CT - Junction Capacitance (pF) 1000 TJ = 25 °C 100 0 10 20 30 40 50 VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage ZthJC - Thermal Impedance (°C/W) 10 1 0.1 0.01 0.001 0.00001 Single pulse (thermal resistance) D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 P DM t 1 t 2 Notes: 1. Duty factor D = t1/t2 . 2. Peak TJ = PDM x ZthJC + TC 0.0001 0.001 0.01 0.1 1 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJ.


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