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VS-150EBU02 Dataheets PDF



Part Number VS-150EBU02
Manufacturers Vishay
Logo Vishay
Description Ultrafast Soft Recovery Diode
Datasheet VS-150EBU02 DatasheetVS-150EBU02 Datasheet (PDF)

www.vishay.com VS-150EBU02 Vishay Semiconductors Ultrafast Soft Recovery Diode, 150 A FRED Pt® PowerTab® Cathode Anode PRODUCT SUMMARY Package IF(AV) VR VF at IF trr (typ.) TJ max. Diode variation PowerTab® 150 A 200 V 1.13 V See recovery table 175 °C Single die FEATURES • Ultrafast recovery time • 175 °C max. operating junction temperature • Screw mounting only • Designed and qualified according to JEDEC-JESD47 • Compliant to RoHS Directive 2002/95/EC • PowerTab® package BENEFITS • Redu.

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www.vishay.com VS-150EBU02 Vishay Semiconductors Ultrafast Soft Recovery Diode, 150 A FRED Pt® PowerTab® Cathode Anode PRODUCT SUMMARY Package IF(AV) VR VF at IF trr (typ.) TJ max. Diode variation PowerTab® 150 A 200 V 1.13 V See recovery table 175 °C Single die FEATURES • Ultrafast recovery time • 175 °C max. operating junction temperature • Screw mounting only • Designed and qualified according to JEDEC-JESD47 • Compliant to RoHS Directive 2002/95/EC • PowerTab® package BENEFITS • Reduced RFI and EMI • Higher frequency operation • Reduced snubbing • Reduced parts count DESCRIPTION/APPLICATIONS These diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for HF welding, power converters and other applications where switching losses are not significant portion of the total losses. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Cathode to anode voltage Continuous forward current Single pulse forward current Maximum repetitive forward current Operating junction and storage temperatures VR IF(AV) IFSM IFRM TJ, TStg TEST CONDITIONS TC = 116 °C TC = 25 °C Square wave, 20 kHz MAX. 200 150 1600 380 - 55 to 175 UNITS V A °C ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS Breakdown voltage, blocking voltage VBR, VR IR = 100 μA Forward voltage IF = 150 A VF IF = 150 A, TJ = 175 °C Reverse leakage current VR = VR rated IR TJ = 150 °C, VR = VR rated Junction capacitance CT VR = 200 V Series inductance LS Measured lead to lead 5 mm from package body MIN. 200 - TYP. - 0.99 0.79 180 3.5 MAX. UNITS - 1.13 0.90 50 2 - V μA mA pF nH Revision: 15-Jun-11 1 Document Number: 93002 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com VS-150EBU02 Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. Reverse recovery time Peak recovery current Reverse recovery charge trr IRRM Qrr IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V TJ = 25 °C TJ = 125 °C TJ = 25 °C TJ = 125 °C TJ = 25 °C IF = 150 A VR = 160 V dIF/dt = 200 A/μs TJ = 125 °C -- 34 - 58 - 4.5 - 9.0 - 87 - 300 MAX. 45 - UNITS ns A nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS Thermal resistance, junction to case RthJC Thermal resistance, case to heatsink RthCS Mounting surface, flat, smooth and greased Weight Mounting torque Marking device Case style PowerTab® MIN. - - 1.2 (10) TYP. - MAX. 0.35 0.2 - - 5.02 0.18 - 2.4 - (20) 150EBU02 UNITS K/W g oz. N·m (lbf · in) Revision: 15-Jun-11 2 Document Number: 93002 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Instantaneous Forward Current - I F (A) www.vishay.com 1000 100 T J = 175˚C T J = 125˚C T J = 25˚C 10 Reverse Current - I R (µA) VS-150EBU02 Vishay Semiconductors 1000 100 10 T J = 175˚C 125˚C 1 25˚C 0.1 0.01 0.001 0 50 100 150 200 Reverse Voltage - VR (V) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage 10000 T J = 25˚C 1000 Junction Capacitance - C T (pF) 1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 Forward Voltage Drop - VFM (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics 1 100 1 10 100 Reverse Voltage - VR (V) 1000 Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage Thermal Impedance Z thJC (°C/W) D = 0.50 D = 0.20 D = 0.10 D = 0.05 0.1 D = 0.02 D = 0.01 Single Pulse (Thermal Resistance) PDM t1 t2 Notes: 1. Duty factor D = t1/ t2 2. Peak Tj = Pdm x ZthJC + Tc 0.01 0.00001 0.0001 0.001 0.01 0.1 t1, Rectangular Pulse Duration (Seconds) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics 1 Revision: 15-Jun-11 3 Document Number: 93002 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com Allowable Case Temperature (°C) 180 160 140 DC 120 100 Square wave (D = 0.50) 80% Rated Vr applied 80 see note (1) 60 0 50 100 150 200 250 Average Forward Current - IF(AV)(A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current Average Power Loss ( Watts ) 250 200 RMS Limit 150 100 50 0 0 D = 0.01 D = 0.02 D = 0.05 D = 0.10 D = 0.20 D .


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