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VS-150EBU02
Vishay Semiconductors
Ultrafast Soft Recovery Diode, 150 A FRED Pt®
PowerTab®
Cathode
Anode
PRODUCT SUMMARY
Package IF(AV) VR
VF at IF trr (typ.) TJ max. Diode variation
PowerTab® 150 A 200 V 1.13 V
See recovery table 175 °C
Single die
FEATURES • Ultrafast recovery time • 175 °C max. operating junction temperature • Screw mounting only • Designed and qualified according to
JEDEC-JESD47 • Compliant to RoHS Directive 2002/95/EC • PowerTab® package
BENEFITS • Reduced RFI and EMI • Higher frequency operation • Reduced snubbing • Reduced parts count
DESCRIPTION/APPLICATIONS These diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for HF welding, power converters and other applications where switching losses are not significant portion of the total losses.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Cathode to anode voltage Continuous forward current Single pulse forward current Maximum repetitive forward current Operating junction and storage temperatures
VR IF(AV) IFSM IFRM
TJ, TStg
TEST CONDITIONS
TC = 116 °C TC = 25 °C Square wave, 20 kHz
MAX. 200 150 1600 380
- 55 to 175
UNITS V A
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Breakdown voltage, blocking voltage
VBR, VR
IR = 100 μA
Forward voltage
IF = 150 A VF
IF = 150 A, TJ = 175 °C
Reverse leakage current
VR = VR rated IR
TJ = 150 °C, VR = VR rated
Junction capacitance
CT VR = 200 V
Series inductance
LS Measured lead to lead 5 mm from package body
MIN.
200
-
TYP.
-
0.99 0.79
180 3.5
MAX. UNITS
-
1.13 0.90 50
2 -
V
μA mA pF nH
Revision: 15-Jun-11
1 Document Number: 93002
For technical questions within your region:
[email protected],
[email protected],
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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VS-150EBU02
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
Reverse recovery time Peak recovery current Reverse recovery charge
trr IRRM Qrr
IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V
TJ = 25 °C
TJ = 125 °C TJ = 25 °C TJ = 125 °C TJ = 25 °C
IF = 150 A VR = 160 V dIF/dt = 200 A/μs
TJ = 125 °C
-- 34 - 58 - 4.5 - 9.0 - 87 - 300
MAX. 45 -
UNITS ns
A nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Thermal resistance, junction to case
RthJC
Thermal resistance, case to heatsink
RthCS
Mounting surface, flat, smooth and greased
Weight
Mounting torque Marking device
Case style PowerTab®
MIN.
-
-
1.2 (10)
TYP. -
MAX. 0.35
0.2 -
- 5.02 0.18 -
2.4 - (20) 150EBU02
UNITS
K/W
g oz. N·m (lbf · in)
Revision: 15-Jun-11
2 Document Number: 93002
For technical questions within your region:
[email protected],
[email protected],
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Instantaneous Forward Current - I F (A)
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1000
100 T J = 175˚C T J = 125˚C T J = 25˚C
10
Reverse Current - I R (µA)
VS-150EBU02
Vishay Semiconductors
1000 100 10
T J = 175˚C 125˚C
1 25˚C
0.1
0.01
0.001 0
50 100 150 200
Reverse Voltage - VR (V)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
10000
T J = 25˚C
1000
Junction Capacitance - C T (pF)
1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 Forward Voltage Drop - VFM (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
1
100 1
10 100 Reverse Voltage - VR (V)
1000
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Thermal Impedance Z thJC (°C/W)
D = 0.50 D = 0.20 D = 0.10 D = 0.05 0.1 D = 0.02 D = 0.01
Single Pulse (Thermal Resistance)
PDM
t1 t2
Notes: 1. Duty factor D = t1/ t2 2. Peak Tj = Pdm x ZthJC + Tc
0.01 0.00001
0.0001
0.001
0.01
0.1
t1, Rectangular Pulse Duration (Seconds)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
1
Revision: 15-Jun-11
3 Document Number: 93002
For technical questions within your region:
[email protected],
[email protected],
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
Allowable Case Temperature (°C)
180
160
140 DC
120
100 Square wave (D = 0.50)
80% Rated Vr applied
80 see note (1)
60 0 50 100 150 200 250 Average Forward Current - IF(AV)(A)
Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current
Average Power Loss ( Watts )
250 200 RMS Limit
150
100
50
0 0
D = 0.01 D = 0.02 D = 0.05 D = 0.10 D = 0.20 D .