VS-10WT10FN

www.vishay.com VS-10UT10, VS-10WT10FN Vishay Semiconductors High Performance Generation 5.0 Schottky Rectifier, 10 A I-PAK (TO-251AA) Base cathode 4 D-PAK (TO-252AA) Base cathode 4 13 Anode 2 Anode Cathode VS-10UT10 2 1 Cathode 3 Anode Anode VS-10WT10FN PRODUCT SUMMARY Package IF(AV) VR VF at IF IRM max. TJ max. Diode variation EAS I-PAK (TO-251AA), D-PAK (TO-252AA) 10 A 100 V 0.66 V 4 mA at 125 °C 175 °C Single die 54 mJ FEATURES 175 °C high performance Schottky diode Very low forward voltage drop Extremely low reverse leakage Optimized VF vs. IR trade off for high efficiency Increased ruggedness for reverse avalanche capability RBSOA available Negligible switching losses Submicron trench technology Compliant to RoHS Directive 2002/95/EC Designed and qualified according to JEDEC-JESD47 APPLICATIONS High efficiency SMPS High frequency switching Output rectification Reverse battery protection Freewheeling DC/DC systems Increased power density systems MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VRRM VF TJ 10 Apk, TJ = 125 °C (typical) Range VALUES 100 0.615 - 55 to 175 VOLTAGE RATINGS PARAMETER Maximum DC reverse voltage SYMBOL VR TEST CONDITIONS TJ = 25 °C VS-10UT10 VS-10WT10FN 100 UNITS V V °C UNITS V ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Maximum average forward current IF(AV) Maximum peak one cycle non-repetitive surge current IFSM Non-repetitive avalanche energy EAS Repetitive avalanche cur...