N-Channel Advanced Power MOSFET
RU8080S
N-Channel Advanced Power MOSFET
MOSFET
Features
• 80V/80A, RDS (ON) =9mΩ(tpy.)@VGS=10V
• Super High Dense Cell ...
Description
RU8080S
N-Channel Advanced Power MOSFET
MOSFET
Features
80V/80A, RDS (ON) =9mΩ(tpy.)@VGS=10V
Super High Dense Cell Design
Ultra Low On-Resistance
100% avalanche tested
Lead Free and Green Devices Available (RoHS Compliant)
Pin Description
TO-263
Applications
DC-DC Converters
N-Channel MOSFET
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
TC=25°C
Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested
ID Continuous Drain Current
PD Maximum Power Dissipation
RθJC Thermal Resistance-Junction to Case
Drain-Source Avalanche Ratings
③
EAS
Avalanche Energy, Single Pulsed
TC=25°C
TC=25°C TC=100°C TC=25°C TC=100°C
Copyright© Ruichips Semiconductor Co., Ltd Rev. A– NOV., 2011
Rating
80 ±25 175 -55 to 175
①
80
②
320
①
80 59 125 62.5 1.2
Unit
V °C °C A
A A W W °C/W
410 mJ www.ruichips.com
RU8080S
Electrical Characteristics (TC=25°C Unless Otherwise Noted)
Symbol
Parameter
Test Condition
RU8080S Unit
Min. Typ. Max.
Static Characteristics BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
④
RDS(ON)
Drain-Source On-state Resistance
VGS=0V, IDS=250µA VDS= 80V, VGS=0V
TJ=85°C VDS=VGS, IDS=250µA VGS=±25V, VDS=0V
VGS= 10V, IDS=40A
80 2
V 1
µA 30 34V ±100 nA 9 11 mΩ...
Similar Datasheet