RU80N15S

Features 150V/80A, RDS (ON) =31mΩ(Typ.)@VGS=10V Avalanche Rated Reliable and Rugged Lead Free and Green Devices Available RU80N15S N-Channel Advanced Power MOSFET Pin Description D Applications Automotive applications and a wide variety of other applications High Efficiency Synchronous in SMPS High Speed Power Switching G S TO263 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink ① IDP 300μs Pulse Drain Current Tested ② ID Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to Ambient Drain-Source Avalanche Ratings ③ EAS Avalanche Energy, Single Pulsed S N-Channel MOSFET Rating Unit TC=25°C 150 ±25 175 -55 to 175 80 V °C °C A TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C 300 A 80 A 60 176 W 88 0.85 °C/W 62.5 °C/W 169 mJ Ruichips Semiconductor Co., Ltd Rev. A– APR., 2013 1 www.ruichips.com RU80N15S Electrical Characteristics (TC=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU80N15S Min. Typ. Max. Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA VDS=150V, VGS=0V IDSS Zero Gate Voltage Drain Current TJ=125°C VGS(th) Gate Threshold Voltage VDS=VGS, IDS=250µA IGSS Gate Leakage Cu...