RU6H4R

RU6H4R N-Channel Advanced Power MOSFET Features 600V/4A, RDS (ON) =1800mΩ(Typ.)@VGS=10V Super High Dense Cell Design Fast Switching 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant) Pin Description Applications High efficiency switch mode power supplies Lighting Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink ① IDP 300μs Pulse Drain Current Tested ② ID Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to Ambient Drain-Source Avalanche Ratings ③ EAS Avalanche Energy, Single Pulsed Ruichips Semiconductor Co., Ltd Rev. A– MAR., 2013 1 GD S TO220 D G S N-Channel MOSFET Rating Unit TC=25°C 600 ±30 150 -55 to 150 4 V °C °C A TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C 16 A 4 A 2.5 83 W 33 1.5 °C/W 62.5 °C/W 88 mJ www.ruichips.com RU6H4R Electrical Characteristics (TC=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU6H4R Min. Typ. Max. Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA VDS=600V, VGS=0V IDSS Zero Gate Voltage Drain Current TJ=125°C VGS(th) Gate Threshold Voltage VDS=VGS, IDS=250µA IGSS Gate Leakage Current VGS=±30V, VDS=0V RDS(ON)④ Drai...