RU6H2K
N-Channel Advanced Power MOSFET
Features
600V/2A,
RDS (ON) =4000mΩ(Typ.)@VGS=10V
Gate charge minimized Low Crss( Typ. 5pF) Extremely high dv/dt capability 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant)
Applications
High efficiency switch mode power supplies Lighting
Pin Description
GDS TO251
D G
Absolut...
