RU6H9R

RU6H9R N-Channel Advanced Power MOSFET MOSFET Features 600V/9.5A, RDS (ON) =0.7Ω (Typ.) @ VGS=10V Gate charge minimized Low Crss( Typ. 20pF) Extremely high dv/dt capability 100% avalanche tested Lead Free and Green Available Pin Description TO-220 Applications High efficiency switch mode power supplies Lighting N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TC=25°C Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case Drain-Source Avalanche Ratings ③ EAS Avalanche Energy, Single Pulsed TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C Copyright© Ruichips Semiconductor Co., Ltd Rev. A– FEB., 2012 Rating 600 ±30 150 -55 to 150 ① 9.5 ② 38 ① 9.5 6.2 156 62 0.8 Unit V °C °C A A A W W °C/W 10 mJ www.ruichips.com RU6H9R Electrical Characteristics (TC=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU6H9R Unit Min. Typ. Max. Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) Gate Threshold Voltage IGSS Gate Leakage Current ④ RDS(ON) Drain-Source On-state Resistance VGS=0V, IDS=250µA VDS= 600V, VGS=0V TJ=85°C VDS=VGS, IDS=250µA VGS=±30V, VDS=0V VGS= ...