Document
Features
•600V/7A, RDS (ON) =1Ω (Typ.) @ VGS=10V
• Gate charge minimized • Low Crss( Typ. 16pF) • Extremely high dv/dt capability • 100% avalanche tested • Lead Free and Green Available
RU6H7R
N-Channel Advanced Power MOSFET
MOSFET
Pin Description
TO-220
Applications
• High efficiency switch mode power supplies • Lighting
N-Channel MOSFET
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested
ID Continuous Drain Current
PD Maximum Power Dissipation
RθJC Thermal Resistance-Junction to Case
Drain-Source Avalanche Ratings
②
EAS
Avalanche Energy, Single Pulsed
TC=25°C
TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C
Copyright© Ruichips Semiconductor Co., Ltd Rev. A – MAY., 2012
Rating
600 ±30 150 -55 to 150
7
①
28
①
7
①
4.5 104 42 1.2
98
Unit
V °C °C A
A A
W °C/W
mJ
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RU6H7R
Electrical Characteristics (TC=25°C Unless Otherwise Noted)
Symbol
Parameter
Test Condition
RU6H7R Unit
Min. Typ. Max.
Static Characteristics BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
③
RDS(ON)
Drain-Source On-state Resistance
VGS=0V, IDS=250µA VDS=600V, VGS=0V
TJ=85°C VDS=VGS, IDS=250µA VGS=±30V, VDS=0V
VGS= 10V, IDS=3.5A
600 2
V 1
µA 30 34V ±100 nA 1 1.2 Ω
Diode Characteristics
③
VSD
Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
④
Dynamic Characteristics RG Gate Resistance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time tr Turn-on Rise Time
td(OFF) Turn-off Delay Time tf Turn-off Fall Time
④
Gate Charge Characteristics
Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge
ISD=7A, VGS=0V
ISD=7A, dlSD/dt=100A/µs
VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS= 300V, Frequency=1.0MHz
VDD=300V, RL=42Ω, IDS=7A, VGEN=10V, RG=25Ω
VDS=480V, VGS=10V, IDS=7A
1.2 V 320 ns 2.4 µC
10 1100 135
16 30 80 65 60
Ω pF
ns
29 7 nC 15
Notes:
①Current limited by maximum junction temperature. ②Limited by TJmax, IAS =14A, VDD = 100V, RG = 50Ω , Starting TJ = 25°C.
③Pulse test ; Pulse width≤300µs, duty cycle≤2%. ④Guaranteed by design, not subject to production testing.
Copyright© Ruichips Semiconductor Co., Ltd Rev. A – MAY., 2012
2
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Typical Characteristics
Power Dissipation
RU6H7R
Drain Current
ID - Drain Current (A)
Ptot - Power (W)
Tj - Junction Temperature (°C) Safe Operation Area
Tj - Junction Temperature (°C) Thermal Transient Impedance
Normalized Effective Transient
ID - Drain Current (A)
VDS - Drain-Source Voltage (V)
Copyright© Ruichips Semiconductor Co., Ltd Rev. A – MAY., 2012
3
Square Wave Pulse Duration (sec)
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Typical Characteristics
Output Characteristics
RU6H7R
Drain-Source On Resistance
RDS(ON) - On Resistance (Ω)
ID - Drain Current (A)
VDS - Drain-Source Voltage (V) Drain-Source On Resistance
ID - Drain Current (A) Gate Threshold Voltage
Normalized Threshold Voltage
DS(ON)R - On - Resistance ()
VGS - Gate-Source Voltage (V)
Tj - Junction Temperature (°C)
Copyright© Ruichips Semiconductor Co., Ltd Rev. A – MAY., 2012
4
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Typical Characteristics
Drain-Source On Resistance
RU6H7R
Source-Drain Diode Forward
IS - Source Current (A)
Normalized On Resistance
Tj - Junction Temperature (°C) Capacitance
VSD - Source-Drain Voltage (V) Gate Charge
VGS - Gate-Source Voltage (V)
C - Capacitance (pF)
VDS - Drain-Source Voltage (V)
Copyright© Ruichips Semiconductor Co., Ltd Rev. A – MAY., 2012
5
QG - Gate Charge (nC)
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Avalanche Test Circuit and Waveforms
RU6H7R
Switching Time Test Circuit and Waveforms
Copyright© Ruichips Semiconductor Co., Ltd Rev. A – MAY., 2012
6
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RU6H7R
Ordering and Marking Information
Device RU6H7R
Marking RU6H7R
Package Packaging
TO-220
Tube
Quantity 50
Reel Size Tape width --
Copyright© Ruichips Semiconductor Co., Ltd Rev. A – MAY., 2012
7
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Package Information
TO-220FB-3L
RU6H7R
SYMBOL
E A A1 A2 A3 A4 c D Q H1 e Øp L D1 Øp1 Øp2
MM MIN NOM MAX 9.96 10.16 10.36 4.50 4.70 4.90 2.34 2.54 2.74 0.95 1.05 1.15 0.42 0.52 0.62 2.65 2.75 2.85
- 0.50 15.67 15.87 16.07 8.80 9.00 9.20 6.48 6.68 6.88
2.54BSC - 3.183 12.78 12.98 13.18 8.99 9.19 9.39 1.40 1.50 1.60 1.15 1.20 1.25
INCH MIN NOM MAX 0.392 0.400 0.408 0.177 0.185 0.193 0.092 0.100 0.108 0.037 0.041 0.045 0.017 0.020 0.024 0.104 0.108 0.112
- 0.020 0.617 0.625 0.633 0.346 0.354 0.362 0.255 0.263 0.271
0.1BSC - 0.125 0.503 0.511 0.519 0.354 0.362 0.370 0.055 0.059 0.063 0.045 0.047 0.049
SYMBOL
Øp3 θ1 θ2 DEP F1 F2 F3 G G1 G2 b1 b2 b3 E1 K1
MIN -
5° -
0.05 1.90 13.61 3.20 3.25 5.90 6.90 1.17 0.77 1.10 9.8 0.75
MM NOM 3.450 7° 45° 0.10 2.00 13.81 3.30 3.45 6.00 7.