DatasheetsPDF.com

RU6H7R Dataheets PDF



Part Number RU6H7R
Manufacturers Ruichips
Logo Ruichips
Description N-Channel Advanced Power MOSFET
Datasheet RU6H7R DatasheetRU6H7R Datasheet (PDF)

Features •600V/7A, RDS (ON) =1Ω (Typ.) @ VGS=10V • Gate charge minimized • Low Crss( Typ. 16pF) • Extremely high dv/dt capability • 100% avalanche tested • Lead Free and Green Available RU6H7R N-Channel Advanced Power MOSFET MOSFET Pin Description TO-220 Applications • High efficiency switch mode power supplies • Lighting N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Max.

  RU6H7R   RU6H7R


Document
Features •600V/7A, RDS (ON) =1Ω (Typ.) @ VGS=10V • Gate charge minimized • Low Crss( Typ. 16pF) • Extremely high dv/dt capability • 100% avalanche tested • Lead Free and Green Available RU6H7R N-Channel Advanced Power MOSFET MOSFET Pin Description TO-220 Applications • High efficiency switch mode power supplies • Lighting N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case Drain-Source Avalanche Ratings ② EAS Avalanche Energy, Single Pulsed TC=25°C TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C Copyright© Ruichips Semiconductor Co., Ltd Rev. A – MAY., 2012 Rating 600 ±30 150 -55 to 150 7 ① 28 ① 7 ① 4.5 104 42 1.2 98 Unit V °C °C A A A W °C/W mJ www.ruichips.com RU6H7R Electrical Characteristics (TC=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU6H7R Unit Min. Typ. Max. Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) Gate Threshold Voltage IGSS Gate Leakage Current ③ RDS(ON) Drain-Source On-state Resistance VGS=0V, IDS=250µA VDS=600V, VGS=0V TJ=85°C VDS=VGS, IDS=250µA VGS=±30V, VDS=0V VGS= 10V, IDS=3.5A 600 2 V 1 µA 30 34V ±100 nA 1 1.2 Ω Diode Characteristics ③ VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ④ Dynamic Characteristics RG Gate Resistance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time tr Turn-on Rise Time td(OFF) Turn-off Delay Time tf Turn-off Fall Time ④ Gate Charge Characteristics Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge ISD=7A, VGS=0V ISD=7A, dlSD/dt=100A/µs VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS= 300V, Frequency=1.0MHz VDD=300V, RL=42Ω, IDS=7A, VGEN=10V, RG=25Ω VDS=480V, VGS=10V, IDS=7A 1.2 V 320 ns 2.4 µC 10 1100 135 16 30 80 65 60 Ω pF ns 29 7 nC 15 Notes: ①Current limited by maximum junction temperature. ②Limited by TJmax, IAS =14A, VDD = 100V, RG = 50Ω , Starting TJ = 25°C. ③Pulse test ; Pulse width≤300µs, duty cycle≤2%. ④Guaranteed by design, not subject to production testing. Copyright© Ruichips Semiconductor Co., Ltd Rev. A – MAY., 2012 2 www.ruichips.com Typical Characteristics Power Dissipation RU6H7R Drain Current ID - Drain Current (A) Ptot - Power (W) Tj - Junction Temperature (°C) Safe Operation Area Tj - Junction Temperature (°C) Thermal Transient Impedance Normalized Effective Transient ID - Drain Current (A) VDS - Drain-Source Voltage (V) Copyright© Ruichips Semiconductor Co., Ltd Rev. A – MAY., 2012 3 Square Wave Pulse Duration (sec) www.ruichips.com Typical Characteristics Output Characteristics RU6H7R Drain-Source On Resistance RDS(ON) - On Resistance (Ω) ID - Drain Current (A) VDS - Drain-Source Voltage (V) Drain-Source On Resistance ID - Drain Current (A) Gate Threshold Voltage Normalized Threshold Voltage DS(ON)R - On - Resistance () VGS - Gate-Source Voltage (V) Tj - Junction Temperature (°C) Copyright© Ruichips Semiconductor Co., Ltd Rev. A – MAY., 2012 4 www.ruichips.com Typical Characteristics Drain-Source On Resistance RU6H7R Source-Drain Diode Forward IS - Source Current (A) Normalized On Resistance Tj - Junction Temperature (°C) Capacitance VSD - Source-Drain Voltage (V) Gate Charge VGS - Gate-Source Voltage (V) C - Capacitance (pF) VDS - Drain-Source Voltage (V) Copyright© Ruichips Semiconductor Co., Ltd Rev. A – MAY., 2012 5 QG - Gate Charge (nC) www.ruichips.com Avalanche Test Circuit and Waveforms RU6H7R Switching Time Test Circuit and Waveforms Copyright© Ruichips Semiconductor Co., Ltd Rev. A – MAY., 2012 6 www.ruichips.com RU6H7R Ordering and Marking Information Device RU6H7R Marking RU6H7R Package Packaging TO-220 Tube Quantity 50 Reel Size Tape width -- Copyright© Ruichips Semiconductor Co., Ltd Rev. A – MAY., 2012 7 www.ruichips.com Package Information TO-220FB-3L RU6H7R SYMBOL E A A1 A2 A3 A4 c D Q H1 e Øp L D1 Øp1 Øp2 MM MIN NOM MAX 9.96 10.16 10.36 4.50 4.70 4.90 2.34 2.54 2.74 0.95 1.05 1.15 0.42 0.52 0.62 2.65 2.75 2.85 - 0.50 15.67 15.87 16.07 8.80 9.00 9.20 6.48 6.68 6.88 2.54BSC - 3.183 12.78 12.98 13.18 8.99 9.19 9.39 1.40 1.50 1.60 1.15 1.20 1.25 INCH MIN NOM MAX 0.392 0.400 0.408 0.177 0.185 0.193 0.092 0.100 0.108 0.037 0.041 0.045 0.017 0.020 0.024 0.104 0.108 0.112 - 0.020 0.617 0.625 0.633 0.346 0.354 0.362 0.255 0.263 0.271 0.1BSC - 0.125 0.503 0.511 0.519 0.354 0.362 0.370 0.055 0.059 0.063 0.045 0.047 0.049 SYMBOL Øp3 θ1 θ2 DEP F1 F2 F3 G G1 G2 b1 b2 b3 E1 K1 MIN - 5° - 0.05 1.90 13.61 3.20 3.25 5.90 6.90 1.17 0.77 1.10 9.8 0.75 MM NOM 3.450 7° 45° 0.10 2.00 13.81 3.30 3.45 6.00 7.


RU6H2R RU6H7R RU6H9P


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)