RU6H10R

RU6H10R N-Channel Advanced Power MOSFET MOSFET Features 600V/10A, RDS (ON) =0.65Ω (Type) @ VGS=10V Gate charge minimized Low Crss( Typ. 15pF) Extremely high dv/dt capability 100% avalanche tested Lead Free and Green Available Pin Description TO-220 TO-263 TO-220F TO-247 Applications High efficiency switch mode power supplies Electronic lamp ballasts based on half bridge N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case Drain-Source Avalanche Ratings ② EAS Avalanche Energy, Single Pulsed TC=25°C TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C Rating 600 ±30 150 -55 to 150 10 40 ① 10 7 185 73 0.68 450 Unit V °C °C A A A W °C/W mJ Copyright© Ruichips Semiconductor Co., Ltd Rev. B – JAN., 2011 www.ruichips.com RU6H10R Electrical Characteristics (TA=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU6H10R Unit Min. Typ. Max. Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) IGSS ③ RDS(ON) Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance VGS=0V, IDS=250µA VDS= 600V, VGS=0V TJ=...