RU5H5L

RU5H5L N-Channel Advanced Power MOSFET MOSFET Features 500V/5A, RDS (ON) =1.3Ω(tpy.)@VGS=10V Super High Dense Cell Design Fast Switching 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant) Pin Description TO-252 Applications Switch Model Power Supplies Electronic Lamp Ballasts N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TC=25°C Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case Drain-Source Avalanche Ratings ③ EAS Avalanche Energy, Single Pulsed TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C Copyright© Ruichips Semiconductor Co., Ltd Rev. A– FEB., 2012 Rating 500 ±30 150 -55 to 150 ① 5 ② 20 ① 5 3.2 78 31 1.6 Unit V °C °C A A A W W °C/W 25 mJ www.ruichips.com RU5H5L Electrical Characteristics (TC=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU5H5L Unit Min. Typ. Max. Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) Gate Threshold Voltage IGSS Gate Leakage Current ④ RDS(ON) Drain-Source On-state Resistance VGS=0V, IDS=250µA VDS=500V, VGS=0V TJ=85°C VDS=VGS, IDS=250µA VGS=±30V, VDS=0V VGS=10V, IDS=2.25A 500...