RU5H11P

Features 500V/11.5A, RDS (ON) =0.55Ω (Typ.) @ VGS=10V Gate Charge Minimized Low Crss Extremely High dv/dt Capability 100% Avalanche Tested Lead Free and Green Available RU5H11P N-Channel Advanced Power MOSFET MOSFET Pin Description TO-220 TO-263 TO-220F TO-247 Applications High efficiency SMPS Lighting Off-Line Adaptors N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case Drain-Source Avalanche Ratings ② EAS Avalanche Energy, Single Pulsed TC=25°C TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C Copyright© Ruichips Semiconductor Co., Ltd Rev. A – SEP., 2011 Rating 500 ±30 150 -55 to 150 11.5 ① 44 ① 11.5 ① 8.1 35 14 3.6 320 Unit V °C °C A A A W °C/W mJ www.ruichips.com RU5H11P Electrical Characteristics (TC=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU5H11P Unit Min. Typ. Max. Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) Gate Threshold Voltage IGSS Gate Leakage Current ③ RDS(ON) Drain-Source On-state Resistance VGS=0V, IDS=250µA VDS= 500V, VGS=0V TJ=85°C VDS=VGS, IDS=250µA VGS=±30...