RU55L18R

RU55L18R P-Channel Advanced Power MOSFET MOSFET Features -60V/-16A, RDS (ON) =100mΩ(Typ.)@VGS=-10V RDS (ON) =125mΩ(Typ.)@VGS=-4.5V Super High Dense Cell Design ESD protected Reliable and Rugged 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant) Applications Power Management Load Switch DC/DC Converter Absolute Maximum Ratings Pin Description TO-220 P-Channel MOSFET Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current(VGS=-10V) PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case Drain-Source Avalanche Ratings ② EAS Avalanche Energy, Single Pulsed TC=25°C TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C Rating -60 ±20 175 -55 to 175 -16 ① -64 -16 -11 54 27 2.8 72 Unit V °C °C A A A W °C/W mJ Copyright© Ruichips Semiconductor Co., Ltd Rev. A– AUG., 2012 www.ruichips.com RU55L18R Electrical Characteristics (TC=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU55L18R Unit Min. Typ. Max. Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) Gate Threshold Voltage IGSS Gate Leakage Current VGS=0V, IDS=-250µA VDS= -60V, VGS=0V TJ=85°C VDS=VGS, IDS=-250µA VGS=±16V, VDS=0V -60 -1 V -1...