N-Channel Advanced Power MOSFET
RU5H13R
N-Channel Advanced Power MOSFET
Features
• 500V/13A,
RDS (ON) =420mΩ(Typ.)@VGS=10V
• Super High Dense Cell Desi...
Description
RU5H13R
N-Channel Advanced Power MOSFET
Features
500V/13A,
RDS (ON) =420mΩ(Typ.)@VGS=10V
Super High Dense Cell Design Fast Switching 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant)
Pin Description
Applications
High efficiency switch mode power supplies Lighting
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
Mounted on Large Heat Sink
①
IDP
300μs Pulse Drain Current Tested
②
ID
Continuous Drain Current(VGS=10V)
PD Maximum Power Dissipation
RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to Ambient
Drain-Source Avalanche Ratings
③
EAS
Avalanche Energy, Single Pulsed
Ruichips Semiconductor Co., Ltd Rev. A– MAY., 2013
1
GD S
TO220
D
G
S
N-Channel MOSFET
Rating
Unit
TC=25°C
500 ±30 150 -55 to 150 13
V
°C °C A
TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C
52 A
13 A
8.2
208 W
83
0.6 °C/W
62.5 °C/W
500 mJ
www.ruichips.com
RU5H13R
Electrical Characteristics (TC=25°C Unless Otherwise Noted)
Symbol
Parameter
Test Condition
RU5H13R Min. Typ. Max.
Static Characteristics
BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA
VDS=500V, VGS=0V IDSS Zero Gate Voltage Drain Current
TJ=125°C
VGS(th) Gate Threshold Voltage
VDS=VGS, IDS=250µA
IGSS Gate Leakage Current
VGS=±30V, VDS=0V
RDS(ON...
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