N-Channel Advanced Power MOSFET
RU40E25L
N-Channel Advanced Power MOSFET
MOSFET
Features
• 40V/25A, RDS (ON) =26mΩ(tpy.)@VGS=10V RDS (ON) =38mΩ(tpy.)@V...
Description
RU40E25L
N-Channel Advanced Power MOSFET
MOSFET
Features
40V/25A, RDS (ON) =26mΩ(tpy.)@VGS=10V RDS (ON) =38mΩ(tpy.)@VGS=4.5V
Super High Dense Cell Design
ESD protected
Reliable and Rugged
100% avalanche tested
Lead Free and Green Devices Available (RoHS Compliant)
Applications
Power Management.
Pin Description
TO252
N-Channel MOSFET
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
Mounted on Large Heat Sink
IDP 300μs Pulse Drain Current Tested
ID Continuous Drain Current(VGS=10V)
PD Maximum Power Dissipation
RθJC Thermal Resistance-Junction to Case
Drain-Source Avalanche Ratings
③
EAS
Avalanche Energy, Single Pulsed
TC=25°C
TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C
Rating
40 ±20 175 -55 to 175 25
①
100
②
25 19 40 20 3.75
40
Unit
V °C °C A
A A
W °C/W
mJ
Copyright© Ruichips Semiconductor Co., Ltd Rev. A– NOV., 2011
www.ruichips.com
RU40E25L
Electrical Characteristics (TC=25°C Unless Otherwise Noted)
Symbol
Parameter
Test Condition
RU40E25L Unit
Min. Typ. Max.
Static Characteristics
BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA
40
V
IDSS Zero Gate Voltage Drain Current VDS= 40V, VGS=0V TJ=85°C
1 µA
30
VGS(th) Gate Threshold Voltage
VDS=VGS, IDS=250µA
1.5 2 2.7 V
IGSS Gate Leakage Current
VGS=±16V, VDS=0V
±10 µA
④
RDS(ON)
...
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