RU30E60M2
N-Channel Advanced Power MOSFET
Features
30V/60A,
RDS (ON) =3mΩ(Typ.)@VGS=10V RDS (ON) =6mΩ(Typ.)@VGS=4.5V
Super High Dense Cell Design Ulta Low On-Resistance ESD Protected(Rating 4KV HBM) Fast Switching Speed 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant)
Applications
Switching Application Systems
Pi...
