RU30E30L

RU30E30L N-Channel Advanced Power MOSFET MOSFET Features 30V/30A, RDS (ON) =16mΩ(tpy.)@VGS=10V RDS (ON) =26mΩ(tpy.)@VGS=4.5V Super High Dense Cell Design ESD protected Reliable and Rugged 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant) Applications DC/DC Converter Motor Drives Pin Description TO252 N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case Drain-Source Avalanche Ratings ③ EAS Avalanche Energy, Single Pulsed TC=25°C TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C Rating 30 ±16 175 -55 to 175 20 ① 120 ② 30 22 40 20 3.75 50 Unit V °C °C A A A W °C/W mJ Copyright© Ruichips Semiconductor Co., Ltd Rev. A– FEB., 2012 www.ruichips.com RU30E30L Electrical Characteristics (TC=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU30E30L Unit Min. Typ. Max. Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) Gate Threshold Voltage IGSS Gate Leakage Current VGS=0V, IDS=250µA VDS= 30V, VGS=0V TJ=85°C VDS=VGS, IDS=250µA VGS=±16V, VDS=0V ④ RDS(ON) Drain-Source On-state Resistan...