N-Channel Advanced Power MOSFET
RU30E40L
N-Channel Advanced Power MOSFET
MOSFET
Features
• 30V/60A, RDS (ON) =5mΩ(Typ.)@VGS=10V RDS (ON) =10mΩ(Typ.)@VG...
Description
RU30E40L
N-Channel Advanced Power MOSFET
MOSFET
Features
30V/60A, RDS (ON) =5mΩ(Typ.)@VGS=10V RDS (ON) =10mΩ(Typ.)@VGS=4.5V
Super High Dense Cell Design
ESD protected
Reliable and Rugged
100% avalanche tested
Lead Free and Green Devices Available (RoHS Compliant)
Applications
Power Management.
Pin Description
TO252
Absolute Maximum Ratings
N-Channel MOSFET
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
TC=25°C
Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested
TC=25°C
ID
Continuous Drain Current(VGS=10V)
TC=25°C
TC=100°C
PD Maximum Power Dissipation
TC=25°C TC=100°C
RθJC Thermal Resistance-Junction to Case
Drain-Source Avalanche Ratings
③
EAS
Avalanche Energy, Single Pulsed
Copyright© Ruichips Semiconductor Co., Ltd Rev. A– JUN., 2012
Rating
30 ±16 175 -55 to 175
①
60
②
240
①
60
①
43 52 26 2.9
Unit
V °C °C A
A A
W °C/W
100 mJ www.ruichips.com
RU30E40L
Electrical Characteristics (TC=25°C Unless Otherwise Noted)
Symbol
Parameter
Test Condition
RU30E40L Unit
Min. Typ. Max.
Static Characteristics BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
VGS(th) Gate Threshold Voltage IGSS Gate Leakage Current
④
RDS(ON)
Drain-Source On-state Resistance
VGS=0V, IDS=250µA VDS= 30V, VGS=0V
TJ=85°C VDS=VGS, IDS=250µA VGS=±16V, VDS=0V ...
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