BCW66F

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCW66F, BCW66G BCW66H GENERAL PURPOSE TRANSISTOR N–P–N transistor Marking BCW 66F = EF BCW 66G = EG BCW 66H = EH PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS Collector–base voltage (open emitter) Collector–emitter voltage (open base) Emitter–base voltage (open collector) Collector current (d.c.) Total power dissipation at Tamb = 25°C D.C. current gain –IC = 100 mA; –VCE = 10 V –IC = 10 mA; VCE = 1 V –IC = 100 mA; VCE = 1 V –IC = 500 mA; VCE = 2 V –VCBO –VCEO –VEBO –IC Ptot hFE BCW66F 66G max. 75 75 max. 45 45 max. 5 5 max. 800 800 max 225 225 66H 75 V 45 V 5V 800 mA 225 mW min. 35 min. 75 min. 100 max. 250 min. 35 50 80 110 180 160 250 400 630 60 100 Continental Device India Limited Data Sheet Page 1 of 3 BCW66F, BCW66G BCW66H RATINGS (at TA = 25°C unless otherwise specified) Limiting values Collector–base voltage (open emitter) Collector–emitter voltage (open base) –VCBO –VCEO Emitter–base voltage (open collector) –VEBO Collector current (d.c.) –IC Total power dissipation at Tamb = 25°C Ptot Storage temperature Tstg BCW max. max. max. max. max 66F 66G 66H 75 75 75 V 45 45 45 V 5 5 5V 800 800 800 mA 225 225 225 mW –55 to +150 ° C THERMAL CHARACTERISTICS Tj = P (Rth j–t + Rth s–a) + Tamb Thermal resistance from junction to ambient Rth j–a 556 ...