SMD Type
Transistors
NPN Transistors BCW66 (KCW66)
■ Features
● BCW66 is subdivided into three groups F,G and H accord...
SMD Type
Transistors
NPN Transistors BCW66 (KCW66)
■ Features
● BCW66 is subdivided into three groups F,G and H according to DC current gain
● Complementary to BCW68
+0.22.8 -0.1
SOT-23-3
2.9 +0.2 -0.1
0.4 +0.1 -0.1
3
12 0.95 +0.1
-0.1
1.9 +0.1 -0.2
+0.21.6 -0.1
0.55 0.4
Unit: mm 0.15 +0.02
-0.02
+0.21.1 -0.1
1. Base 2. Emitter 3. Collector
0-0.1 +0.10.68
-0.1
■ Absolute Maximum Ratings Ta = 25℃
Parameter Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current - Continuous Collector Power Dissipation Junction Temperature Storage Temperature Range
Symbol VCBO VCEO VEBO IC PC TJ Tstg
Rating 75 45 5 800 200 150
-55 to 150
Unit
V
mA mW ℃
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SMD Type
NPN Transistors BCW66 (KCW66)
■ Electrical Characteristics Ta = 25℃
Parameter Collector- base breakdown voltage Collector- emitter breakdown voltage Emitter - base breakdown voltage Collector-base cut-off current Emitter cut-off current Collector-emitter saturation voltage (Note.1) Base - emitter saturation voltage (Note.1)
DC current gain
Collector output capacitance Collector input capacitance Noise figure Transition frequency
Symbol
Test Conditions
VCBO Ic= 100 μA, IE= 0
VCEO VEBO
Ic= 10 mA, IB= 0 IE= 100μA, IC= 0
ICBO VCB= 45 V , IE= 0
IEBO VEB= 4V , IC=0
IC=100 mA, IB=10mA VCE(sat)
IC= 500 mA, IB= 50mA
VBE(sat) IC= 500 mA, IB= 50mA
VCE= 10V, IC= 100uA
F
hFE(1)
G
H
VCE= 1V, IC= 10mA
F
hFE(2)
G
H
VCE= 1V, IC= 100mA
F
hFE(3)
G
H
VCE= 2V, ...